Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same
View Patent ↗Semiconductor structures and devices including strained material layers having impurity-free zones, and methods for fabricating same. Certain regions of the strained material layers are kept free of impurities that can interdiffuse from adjacent portions of the semiconductor. When impurities are present in certain regions of the strained material layers, there is degradation in device performance. By employing semiconductor structures and devices (e.g., field effect transistors or “FETs”) that have the features described, or are fabricated in accordance with the steps described, device operation is enhanced.
1. A method of forming a semiconductor device, the method comprising the steps of:
forming an isolation region in a substrate, thereby defining a device active area bound by the isolation region on at least two sides;
forming a gate structure over the device active area, thereby defining a channel region below the gate structure; and
thereafter, epitaxially depositing a semiconductor material directly above at least a portion of the channel region, thereby forming a strained channel in the channel region.
2. The method of claim 1 , wherein the semiconductor material comprises SiGe.
3. The method of claim 1 , wherein a concentration of Ge in the strained channel is substantially equal to zero.
4. The method of claim 3 , wherein a concentration of Ge in a topmost portion of the strained channel is substantially equal to zero, the topmost portion of the strained channel being approximately 50 Angstroms thick.
5. The method of claim 1 , further comprising forming a gate dielectric over the channel region, wherein the gate dielectric has a dielectric constant greater than a dielectric constant of SiO 2 and comprises Hf.
6. The method of claim 1 , further comprising, before epitaxially depositing the semiconductor material, forming at least one insulator proximate to a sidewall of the gate structure.
7. The method of claim 1 , wherein strain in the strained channel is induced by lattice mismatch.
8. The method of claim 1 , wherein the semiconductor material is deposited selectively.
9. The method of claim 1 , wherein the semiconductor material is compressively strained.
10. The method of claim 9 , wherein the semiconductor material comprises SiGe.
11. The method of claim 1 , wherein the strained channel is compressively strained and comprises Si.
12. The method of claim 1 , further comprising performing extension implantation in the device active area prior to epitaxial deposition of the semiconductor material, thereby defining source and drain regions proximate the channel region.
13. The method of claim 1 , further comprising performing source and drain implantation in the device active area prior to epitaxial deposition of the semiconductor material, thereby defining source and drain regions proximate the channel region.
14. The method of claim 13 , further comprising forming a silicide on the source and drain regions after epitaxial deposition of the semiconductor material.
15. The method of claim 1 , wherein the substrate comprises a buried insulating layer.
16. The method of claim 1 , wherein the gate structure comprises a dummy gate, and further comprising replacing the dummy gate with a gate electrode after epitaxial deposition of the semiconductor material.
17. The method of claim 16 , wherein the gate electrode consists essentially of metal.
18. The method of claim 1 , wherein the gate structure comprises polysilicon.
19. The method of claim 6 , wherein the at least one insulator comprises a dielectric spacer.
20. The method of claim 6 , wherein the at least one insulator is formed directly on the sidewall of the gate structure.
21. A method for forming a MOSFET, the method comprising the steps of:
depositing and patterning a material over a semiconductor substrate to define a MOSFET channel region in a portion of the semiconductor substrate;
defining a source region and a drain region proximate the MOSFET channel region; and
thereafter, forming a strained channel in the MOSFET channel region by depositing a semiconductor material directly above at least a portion of the MOSFET channel region,
wherein strain in the strained channel is induced by lattice mismatch between the semiconductor material and an adjacent semiconductor material.
22. A method of forming a MOSFET, the method comprising the steps of:
forming an isolation region in a substrate, thereby defining a device active area bound by the isolation region on at least two sides;
forming a gate structure over the device active area, thereby defining a MOSFET channel region below the gate structure;
implanting dopants into at least a portion of the device active area to define source and drain regions; and
thereafter, epitaxially depositing a semiconductor material directly above at least a portion of the MOSFET channel region, thereby forming a strained channel in the MOSFET channel region,
wherein the semiconductor material is lattice-mismatched to the substrate.
23. The method of claim 22 , wherein forming the gate structure comprises forming at least one insulator on a sidewall thereof.
24. A method of forming a MOSFET with a channel having strain induced by lattice mismatch between silicon and silicon-germanium, the method comprising the steps of:
forming a shallow trench isolation region to define a device active area;
forming a MOSFET gate region above the device active area, thereby defining a corresponding transistor channel region below the MOSFET gate region;
forming MOSFET source and drain regions in the device active area adjacent the gate region; and
after forming the MOSFET source and drain regions, inducing strain in the transistor channel region through lattice mismatch between silicon-germanium and silicon by depositing at least one of silicon-germanium and silicon directly above the transistor channel region.
25. The method of claim 22 , wherein the strained channel comprises the semiconductor material.
26. The method of claim 24 , wherein the transistor channel region comprises silicon-germanium.