Signal line for a display device, etchant, thin film transistor panel, and method for manufacturing the same
View Patent ↗A thin film panel includes a substrate, a gate line formed on the substrate, a gate insulating layer formed on the gate line, a semiconductor layer formed on the gate insulating layer, a data line, including a source electrode, and a drain electrode formed on the gate insulating layer or the semiconductor layer, and a pixel electrode connected to the drain electrode, wherein at least one of the gate line and the data line and drain electrode includes a first conductive layer made of a molybdenum Mo-niobium Nb alloy and a second conductive layer made of a copper Cu-containing metal.
1. A method for forming a thin film transistor array panel, the method comprising:
forming a gate line on a substrate;
forming a gate insulating layer on the gate line;
forming a semiconductor layer on the gate insulating layer;
forming a data line, including a source electrode, and a drain electrode on the gate insulating layer or the semiconductor layer; and
forming a pixel electrode connected to the drain electrode,
wherein at least one of the gate line and the data line and drain electrode includes a first conductive layer made of a molybdenum Mo-niobium Nb alloy and a second conductive layer made of a copper Cu-containing metal,
wherein the first and second conductive layers are etched with one etch condition, and
wherein the etch condition is wet etching, and an etchant of the wet etching includes benzotriazole, citric acid, hydrogen peroxide, hydrofluoric acid, and deionized water.
2. The method of claim 1 , wherein the first conductive layer is disposed under the second conductive layer.
3. The method of claim 2 , wherein at least one of the gate line and the data line and drain electrode further comprises:
a third conductive layer made of a molybdenum Mo-niobium Nb alloy and disposed on the second conductive layer.
4. The method of claim 1 , wherein the etchant includes benzotriazole at about 0.1 to 1 wt %, citric acid at about 1 to 5 wt %, hydrogen peroxide at about 10 to 20 wt %, hydrofluoric acid at about 0.01 to 0.5 wt %, and deionized water for a remainder of the etchant.