Wire pad of semiconductor device
View Patent ↗A semiconductor device includes a low-k layer formed over a semiconductor device; a first TEOS film formed over the low-k layer; a SiCN layer formed over the first TEOS film; an undoped silicate glass film formed over the SiCN layer; a nitride film formed over the USG film; a second TEOS film formed over the nitride film; a first metal interconnect extending from the low-k layer to the undoped silicate glass film; and a second metal interconnect extending from the nitride film to the second TEOS film, wherein the first metal interconnect and the second metal interconnect are electrically connected and a wire is bonded to the second metal interconnect.
1. An apparatus comprising:
a low-k layer formed over the upper surface of a semiconductor device;
an oxide layer formed over the upper surface of the low-k layer;
a SiCN layer formed over the upper surface of the oxide layer;
an undoped silicate glass film formed over the upper surface of the SiCN layer;
a nitride film formed over the upper surface of the undoped silicate glass film;
a TEOS film formed over the upper surface of the nitride film;
a first metal interconnect extending from the low-k layer to the undoped silicate glass film; and
a second metal interconnect extending from the nitride film to the TEOS film,
wherein the first metal interconnect and the second metal interconnect are electrically connected.
2. The apparatus of claim 1 , wherein the first metal interconnect comprises copper.
3. The apparatus of claim 1 , wherein the second metal interconnect comprises an aluminum-copper material.
4. The apparatus of claim 1 , wherein the nitride film comprises SiN.
5. The apparatus of claim 1 , wherein the first metal interconnect is formed using a damascene process on the low-k layer to the TEOS film.
6. The apparatus of claim 1 , further comprising a wire bonded to the second metal interconnect.
7. The apparatus of claim 1 , wherein the low-k layer, the oxide layer, the SiCN layer, the undoped silicate glass film, the nitride film and the TEOS film are formed to predetermined thicknesses.
8. An apparatus comprising:
a low-k layer formed over a semiconductor device;
a first TEOS film formed over the low-k layer;
a SiCN layer formed over the first TEOS film;
an undoped silicate glass film formed over the SiCN layer;
a nitride film formed over the USG film;
a second TEOS film formed over the nitride film;
a first metal interconnect extending from the low-k layer to the undoped silicate glass film; and
a second metal interconnect extending from the nitride film to the second TEOS film
wherein the first metal interconnect and the second metal interconnect are electrically connected.
9. The apparatus of claim 8 , wherein the first metal interconnect comprises copper.
10. The apparatus of claim 8 , wherein the second metal interconnect comprises an aluminum-copper material.
11. The apparatus of claim 8 , wherein the first metal interconnect is formed using a damascene process on the low-k layer to the second TEOS film.
12. The apparatus of claim 8 , further comprising a wire bonded to the second metal interconnect.
13. The apparatus of claim 8 , wherein the low-k layer, the SiCN layer, the undoped silicate glass film, the nitride film, the first TEOS film and the second TEOS film are formed to predetermined thicknesses.
14. A method comprising:
forming a low-k layer over a semiconductor device;
forming an oxide layer over the low-k layer;
forming a SiCN layer over the oxide layer;
forming an undoped silicate glass film over the SiCN layer;
forming a nitride film over the undoped silicate glass film;
forming a TEOS film over the nitride film;
forming a first metal interconnect extending from the low-k layer to the undoped silicate glass film; and
forming a second metal interconnect extending from the nitride film to the TEOS film,
electrically connecting the first metal interconnect and the second metal interconnect.
15. The method of claim 14 , wherein the first metal interconnect comprises copper.
16. The method of claim 14 , wherein the second metal interconnect comprises an aluminum-copper material.
17. The method of claim 14 , wherein the nitride film comprises SIN.
18. The method of claim 14 , wherein the first metal interconnect is formed using a damascene process on the low-k layer to the TEOS film.
19. The method of claim 1 , further comprising bonding a wire to the second metal interconnect.
20. The method of claim 14 , wherein the low-k layer, the oxide layer, the SiGN layer, the undoped silicate glass film, the nitride film and the TEOS film are formed to predetermined thicknesses.