Electro-luminescence device including a thin film transistor and method of fabricating an electro-luminescence device

1. An electro-luminescence device, comprising:

an electro-luminescence element; and

a thin film transistor electrically connected to the electro-luminescence element, the thin film transistor comprising:

a gate electrode formed over a substrate;

an insulating layer formed over the gate electrode;

a first semiconductor pattern formed over the insulating layer;

an etch stop layer formed over the first semiconductor layer;

a second semiconductor pattern formed over the etch stop layer at one side of the etch stop layer;

a third semiconductor pattern formed over the etch stop layer at another side of the etch stop layer;

a source electrode formed over the second semiconductor pattern; and

a drain electrode formed over the third semiconductor pattern.

2. The electro-luminescence device of claim 1 , wherein the electro-luminescence element comprises

an anode electrode;

a light emitting layer formed over the anode electrode; and

a cathode electrode formed over the light emitting layer.

3. The electro-luminescence device of claim 2 , wherein the anode electrode is electrically connected to the drain electrode of the thin film transistor.

4. The electro-luminescence device of claim 2 wherein the light emitting layer is an organic light emitting layer.

5. An electro-luminescence device comprising:

a gate bus line extending in a first direction over a substrate;

a data bus line extending in a second direction over the substrate;

a power supply line extending parallel to the data bus line over the substrate;

a switching transistor electrically connected to the gate bus line, the switching transistor comprising:

a first gate electrode extending from the gate bus line;

a first semiconductor pattern formed over the first gate electrode;

a first etch stop layer formed over the first semiconductor pattern;

a second semiconductor pattern formed over the first semiconductor pattern at one side of the first etch stop layer;

a third semiconductor pattern formed over the first semiconductor pattern at another side of the first etch stop layer;

a first source electrode formed over the second semiconductor pattern, the first source electrode extending from the data bus line; and

a first drain electrode formed over the third semiconductor pattern;

a driving transistor electrically connected to the power supply tine, the driving transistor comprising:

a second gate electrode electrically connected to the first drain electrode of the switching transistor;

a fourth semiconductor pattern formed over the second gate electrode;

a second etch stop layer formed over the fourth semiconductor pattern;

a fifth semiconductor pattern formed over the fourth semiconductor pattern at one side of the second etch stop layer;

a sixth semiconductor pattern formed over the fourth semiconductor pattern at another side of the second etch stop layer;

a second source electrode formed over the fifth semiconductor layer, the second source electrode extending from the power supply line; and

a second drain electrode formed over the sixth semiconductor layer;

an electro-luminescence element electrically connected to the second drain electrode of the driving transistor.

6. The electro-luminescence device of claim 5 , wherein the electro-luminescence element comprises:

an anode electrode electrically connected to the second drain electrode of the driving transistor;

a light emitting layer formed over the anode electrode; and

a cathode electrode formed over the light emitting layer.

7. The electro-luminescence device of claim 6 wherein the light emitting layer is an organic light emitting layer.

8. The electro-luminescence device of claim 5 , wherein the first and fourth semiconductor patterns are formed of an amorphous silicon film.

9. The electro-luminescence device of claim 5 , wherein the second is third, fifth and sixth semiconductor patterns are formed of an n + amorphous silicon film.

10. The electro-luminescence device of claim 5 , wherein the first and second etch stop layers have a thickness of about 100 Å to about 200 Å.

11. The electro-luminescence device of claim 5 , further comprising:

a connecting electrode that connects the first drain electrode to the second gate electrode.