Semiconductor memory and method of manufacturing the same
View Patent ↗A semiconductor memory includes a plurality of stripe-like active areas formed by stacking, in a direction perpendicular to a substrate, a plurality of layers extending parallel to the substrate, a first gate electrode formed on first side surfaces of the active areas, the first side surfaces being perpendicular to the substrate, a second gate electrode formed on second side surfaces of the active areas, the second side surfaces being perpendicular to the substrate. The layers are patterned in self-alignment with each other, intersections of the active areas and the first gate electrode form a plurality of memory cells, and the plurality of memory cells in an intersecting plane share the first gate electrode.
1. A semiconductor memory, comprising:
a plurality of stripe-shaped semiconductor layers stacked on a substrate, patterned in self-alignment with each other and extending parallel to the substrate, each of the semiconductor layers having one end and other end parallel to the substrate, the one end being a source, the other end being a drain, the other ends of the semiconductor layers forming a stairs-shape;
a gate electrode formed only on side surfaces of the semiconductor layers and extending perpendicular to the substrate;
a plurality of cell transistors formed at intersections of the gate electrode and the side surfaces of the semiconductor layers and driven in the common gate electrode; and
a plurality of layer selecting transistors formed respectively on the other stairs-shaped ends of the semiconductor layers and selecting each of the semiconductor layers.
2. The memory according to claim 1 , wherein the drains of the semiconductor layers are connected to a common interconnection.
3. The memory according to claim 1 , wherein the sources of the semiconductor layers are connected to a common interconnection.
4. The memory according to claim 1 , wherein the number of the semiconductor layers is 4 or more.
5. The memory according to claim 1 , wherein the cell transistors are transistors of depletion type.
6. The memory according to claim 1 , wherein the semiconductor layers are made of single-crystal silicon.
7. The memory according to claim 1 , wherein the semiconductor layers are formed in a recess dug down from a top surface of the substrate, and a top most surface of the semiconductor layers is below the top surface of the substrate.
8. The memory according to claim 1 , wherein a plurality of gate electrodes extending perpendicular to the substrate are formed only on side surfaces of the semiconductor layers and a plurality of cell transistors formed at intersections of the plurality of gate electrodes and one of the semiconductor layers form a NAND chain of a NAND flash memory.
9. The memory according to claim 1 , wherein the semiconductor layers are equal in thickness.
10. The memory according to claim 1 , wherein each of the semiconductor layers is formed on a corresponding insulating film.
11. The memory according to claim 1 , wherein a plurality of stacked structures, each including the plurality of stripe-shaped semiconductor layers and extending in parallel with each other, are provided on the substrate, wherein a plurality of gate electrodes extending perpendicular to the substrate are filled between the plurality of stacked structures respectively, and the plurality of gate electrodes are connected with each other at a top most surface of the semiconductor layers.
12. The memory according to claim 1 , wherein the plurality of layer selecting transistors are each a tri-gate type in which a gate electrode covers a top surface and the side surfaces of the other ends of the semiconductor layer.
13. A semiconductor memory, comprising:
a plurality of stripe-shaped semiconductor layers stacked on a substrate, patterned in self-alignment with each other and extending parallel to the substrate, each of the semiconductor layers having one end and other end parallel to the substrate, the one end being a source, the other end being a drain;
a gate electrode formed only on side surfaces of the semiconductor layers and extending perpendicular to the substrate;
a plurality of cell transistors formed at intersections of the gate electrode and the side surfaces of the semiconductor layers and driven by the common gate electrode; and
a plurality of layer selecting transistors selecting each of the semiconductor layers and being a tri-gate type, a gate electrode of each of the layer selecting transistors covering a top surface and side surfaces of a channel semiconductor.
14. The memory according to claim 13 , wherein the number of the semiconductor layers is four or more.
15. The memory according to claim 13 , wherein the cell transistors are transistors of depletion type.
16. The memory according to claim 13 , wherein the cell transistors are made of single-crystal silicon.
17. The memory according to claim 13 , wherein the semiconductor layers are formed in a recess dug down from a top surface of the substrate, and a top most surface of the semiconductor layers is below the top surface of the substrate.
18. The memory according to claim 13 , wherein a plurality of gate electrodes extending perpendicular to the substrate are formed only on side surfaces of the semiconductor layers and a plurality of cell transistors formed at intersections of the plurality of gate electrodes and one of the semiconductor layers form a NAND chain of a NAND flash memory.
19. The memory according to claim 13 , wherein the semiconductor layers are equal in thickness.
20. The memory according to claim 13 , wherein a plurality of stacked structures, each including the plurality of stripe-shaped semiconductor layers and extending in parallel with each other, are provided on the substrate, wherein a plurality of gate electrodes extending perpendicular to the substrate are filled between the plurality of stacked structures respectively, and the plurality of gate electrodes are connected with each other at a top most surface of the semiconductor layers.