Thin film transistor and organic light emitting device including thin film transistor
View Patent ↗The present invention relates to a thin film transistor. The thin film transistor includes a semiconductor having first, second, third, fourth, and fifth electrode regions arranged in a direction and spaced apart from each other and first, second, third, and fourth offset regions disposed between the first, second, third, fourth, and fifth electrode regions, respectively. An input electrode is connected to the third electrode region, an output electrode is connected to the first and fifth electrode regions, an insulating layer is disposed on the semiconductor, and a control electrode is disposed on the insulating layer and the second and fourth electrode regions.
1. A thin film transistor, comprising:
a semiconductor having a first electrode region, a second electrode region, a third electrode region, a fourth electrode region, and a fifth electrode region arranged in a first direction and spaced apart from each other, and a first offset region, a second offset region, a third offset region, and a fourth offset region disposed between the first electrode region, the second electrode region, the third electrode region, the fourth electrode region, and the fifth electrode region, respectively;
an input electrode connected to the third electrode region;
an output electrode connected to the first electrode region and the fifth electrode region;
an insulating layer disposed on the semiconductor; and
a control electrode disposed on the insulating layer, the second electrode region, and the fourth electrode region,
wherein each of the control electrode and the input electrode intersects the semiconductor.
2. The thin film transistor of claim 1 , wherein the semiconductor is polycrystalline silicon or microcrystalline silicon.
3. The thin film transistor of claim 1 , further comprising a plurality of ohmic contacts positioned between the semiconductor and the input electrode and the output electrode.
4. The thin film transistor of claim 3 , wherein the ohmic contacts comprise polycrystalline silicon or microcrystalline silicon that comprises an impurity.
5. The thin film transistor of claim 1 , wherein the insulating layer comprises silicon nitride or silicon oxide.
6. An organic light emitting device, comprising:
an organic light emitting element connected to a common voltage;
a driving transistor connected to the organic light emitting element and a driving voltage;
a switching transistor connected to the driving transistor;
a gate line connected to the switching transistor; and
a data line connected to the switching transistor and insulated from the gate line,
wherein the driving transistor comprises:
a crystalline semiconductor having a first electrode region, a second electrode region, a third electrode region, a fourth electrode region, and a fifth electrode region arranged in a first direction and spaced apart from each other and a first offset region, a second offset region, a third offset region, and a fourth offset region disposed between the first electrode region, the second electrode region, the third electrode region, the fourth electrode region, and the fifth electrode region, respectively,
a first input electrode connected to the third electrode region and the driving voltage,
a first output electrode connected to the first electrode region, the fifth electrode region, and the organic light emitting element,
a gate insulating layer disposed on the crystalline semiconductor, and
a first control electrode disposed on the gate insulating layer, the second electrode region, and the fourth electrode region, and connected to the switching transistor,
wherein each of the control electrode and the input electrode intersects the semiconductor.
7. The organic light emitting device of claim 6 , wherein the switching transistor comprises an amorphous semiconductor disposed on the gate insulating layer.
8. The organic light emitting device of claim 7 , wherein the switching thin film transistor further comprises:
a second control electrode disposed under the gate insulating layer and connected to the gate line;
a second input electrode disposed on the amorphous semiconductor and connected to the data line; and
a switching output electrode disposed on the amorphous semiconductor, spaced apart from the second input electrode, and connected to the first control electrode.
9. The organic light emitting device of claim 6 , wherein the driving transistor further comprises a plurality of ohmic contacts disposed between the crystalline semiconductor and the first input electrode and the first output electrode.
10. The organic light emitting device of claim 9 , wherein the ohmic contacts comprise polycrystalline silicon or microcrystalline silicon that comprises an impurity.
11. The organic light emitting device of claim 6 , wherein the gate insulating layer comprises silicon nitride or silicon oxide.
12. The organic light emitting device of claim 6 , further comprising a color filter overlapping the organic light emitting element, wherein the organic light emitting element emits white light.
13. A thin film transistor, comprising:
a semiconductor extending in a first direction;
a first electrode insulated from the semiconductor and intersecting the semiconductor in a first area and a second area;
a second electrode contacting the semiconductor at a third area, the third area being between the first area and the second area; and
a third electrode contacting the semiconductor at a fourth area and a fifth area, the first area being between the third area and the fourth area, and the second area being between the third area and the fifth area,
wherein the second electrode intersects the semiconductor.
14. The thin film transistor of claim 13 , wherein the first electrode comprises a first branch and a second branch perpendicular to the semiconductor, the second electrode comprises one branch perpendicular to the semiconductor, and the third electrode comprises a first branch and a second branch perpendicular to the semiconductor.
15. The thin film transistor of claim 14 , wherein the first branch of the third electrode, the first branch of the first electrode, the branch of the second electrode, the second branch of the first electrode, and the second branch of the third electrode are sequentially disposed.
16. The thin film transistor of claim 15 , wherein the distance between the first branch of the third electrode and the first branch of the first electrode, the distance between the first branch of the first electrode and the branch of the second electrode, the distance between the branch of the second electrode and the second branch of the first electrode, and the distance between the second branch of the first electrode and the second branch of the third electrode are all the same.
17. The thin film transistor of claim 15 , wherein the sum of the distance between the first branch of the first electrode and the branch of the second electrode and the distance between the branch of the second electrode and the second branch of the first electrode equals the sum of the distance between the first branch of the third electrode and the first branch of the first electrode and the distance between the second branch of the first electrode and the second branch of the third electrode.
18. The thin film transistor of claim 13 , wherein the semiconductor is polycrystalline silicon or microcrystalline silicon.
19. The thin film transistor of claim 13 , further comprising a plurality of ohmic contacts positioned between the semiconductor and the second electrode and the third electrode.
20. The thin film transistor of claim 19 , wherein the ohmic contacts comprise polycrystalline silicon or microcrystalline silicon that includes an impurity.