C-plane sapphire method and apparatus
A method and apparatus for the production of C-plane single crystal sapphire is disclosed. The method and apparatus may use edge defined film-fed growth techniques for the production of single crystal material exhibiting low polycrystallinity and/or low dislocation density.
1. An as-grown C-plane single crystal sapphire ribbon having a neck and a body with substantially planar major surfaces, wherein the ribbon has a width of greater than or equal to 7.5 cm, a length of greater than the width, and fewer than 900 dislocations per cm 2 when measured through a thickness of the crystal using transmission X-ray diffraction topography based on Bragg diffraction, wherein the as-grown C-plane single crystal sapphire ribbon is formed by an edge defined film-fed growth technique.
2. The as-grown C-plane single crystal sapphire ribbon of claim 1 having a width of greater than or equal to about 10 cm.
3. The as-grown C-plane single crystal sapphire ribbon of claim 1 exhibiting fewer than 900 dislocations per cm 2 when measured through the thickness of 0.15 cm using the transmission X-ray diffraction topography based on Bragg diffraction.
4. The as-grown C-plane single crystal sapphire ribbon of claim 1 exhibiting fewer than 100 dislocations per cm 2 when measured through the thickness of 0.15 cm using the transmission X-ray diffraction topography based on Bragg diffraction.
5. The as-grown C-plane single crystal sapphire ribbon of claim 1 exhibiting fewer than 10 dislocations per cm 2 when measured through the thickness of 0.15 cm using the transmission X-ray diffraction topography based on Bragg diffraction.
6. The as-grown C-plane single crystal sapphire ribbon of claim 1 exhibiting fewer than 500 dislocations per cm 2 when measured through the thickness of 0.15 cm using the transmission X-ray diffraction topography based on Bragg diffraction.
7. The as-grown C-plane single crystal sapphire ribbon of claim 1 , wherein the width is greater than or equal to 15 cm.
8. The as-grown C-plane single crystal sapphire ribbon of claim 1 exhibiting fewer than 500 dislocations per cm 2 .
9. The as-grown C-plane single crystal sapphire ribbon of claim 1 exhibiting fewer than 100 dislocations per cm 2 .