Phase shift mask and method for manufacturing light-collecting device
View Patent ↗The phase shift mask according to the present invention is a phase shift mask for manufacturing a semiconductor device. The phase shift mask includes a light-blocking portion, a light-transmitting portion, a phase shift portion, and an auxiliary pattern portion, the light-blocking portion, the light-transmitting portion, the phase shift portion, and the auxiliary pattern portion being concentrically arranged, wherein a width of the auxiliary pattern portion in a radius direction is less than a width of the light-transmitting portion and a width of the phase shift portion in a radius direction. Furthermore, it is possible that a phase of exposure light which passes through an auxiliary pattern portion is opposite to a phase of exposure light which passes through a light-transmitting portion or a phase shift portion, the light-transmitting portion or the phase shift portion being the closest to the auxiliary pattern portion.
1. A phase shift mask for manufacturing a semiconductor device, said phase shift mask comprising:
a first light-blocking portion;
an auxiliary pattern portion adjacent to and outside of said first light-blocking portion;
a second light-blocking portion adjacent to and outside of said auxiliary pattern portion; and
a third portion comprising a phase shift portion or a light-transmitting portion, said third portion being adjacent to and outside of said second light-blocking portion;
wherein a width of said auxiliary pattern portion in a radius direction is less than a width of said light-transmitting portion and a width of said phase shift portion in a radius direction, such that the auxiliary pattern portion does not substantially expose an underlying resist to exposure light which is transmitted to the phase shift mask, and
a portion of the exposure light which has passed through said auxiliary pattern portion has a phase opposite to a phase of a portion of the exposure light which has passed through said third portion.
2. The phase shift mask according to claim 1 ,
wherein said auxiliary pattern portion is located at a fixed distance from said third portion.
3. The phase shift mask according to claim 1 , further comprising a first light-transmitting portion, a first phase shift portion, and a third light-blocking portion,
wherein said first light-transmitting portion is adjacent to said first phase shift portion via said third light-blocking portion, and
said third portion is adjacent to said auxiliary pattern portion via said second light-blocking portion.
4. The phase shift mask according to claim 1 ,
wherein the width of said auxiliary pattern portion is approximately equal to or less than one fourth of a wavelength of the exposure light.
5. A method for manufacturing a light-collecting device, said method comprising
exposing a resist on a semiconductor to exposure light using a phase shift mask which comprises:
a first light-blocking portion;
an auxiliary pattern portion adjacent to and outside of the first light-blocking portion;
a second light-blocking portion adjacent to and outside of the auxiliary pattern portion; and
a third portion comprising a phase shift portion or a light-transmitting portion, the third portion being adjacent to and outside of the second light-blocking portion,
wherein a width of the auxiliary pattern portion in a radius direction is less than a width of the light-transmitting portion and a width of the phase shift portion in a radius direction, such that the auxiliary pattern portion does not substantially expose the resist to the exposure light, and
a portion of the exposure light which has passed through the auxiliary pattern portion has a phase opposite to a phase of a portion of the exposure light which has passed through the third portion.
6. The method according to claim 5 ,
wherein the width of the auxiliary pattern portion is approximately equal to or less than one fourth of a wavelength of the exposure light.
7. The phase shift mask according to claim 2 ,
wherein the width of said auxiliary pattern portion is approximately equal to or less than one fourth of a wavelength of the exposure light.
8. The phase shift mask according to claim 3 ,
wherein the width of said auxiliary pattern portion is approximately equal to or less than one fourth of a wavelength of the exposure light.