High detective quantum efficiency X-ray detectors
View Patent ↗An image acquisition apparatus includes a conversion layer for generating electrons in response to electromagnetic radiation photons, and a first semiconducting layer adjacent to the conversion layer for generating electron-hole pairs in response to electrons generated by the conversion layer.
1. An image acquisition apparatus comprising a conversion layer for generating electrons in response to electromagnetic radiation photons, and a first semiconducting layer and a second semiconducting layer adjacent to the conversion layer for generating electron-hole pairs in response to electrons generated by the conversion layer.
2. The image acquisition apparatus of claim 1 wherein the conversion layer comprises a first surface, and a second surface, said first semiconducting layer and said second semiconducting layer are adjacent to the first surface of the conversion layer, and said conversion layer is configured such that the electromagnetic radiation photons enter the conversion layer from the second surface of the conversion layer.
3. The image acquisition apparatus of claim 1 wherein said conversion layer comprises an edge end defining a thickness of the conversion layer, and a first and a second side surfaces extending from said edge end defining a width and a length of the conversion layer, said conversion layer being configured such that the electromagnetic radiation photons enter the conversion layer from the edge end and traverse at least partially through the conversion layer in a widthwise direction.
4. The image acquisition apparatus of claim 1 wherein the semiconducting layer comprises a plurality of islands forming pixels of the image acquisition apparatus.
5. The image acquisition apparatus of claim 1 which is an X-ray image acquisition apparatus.
6. The image acquisition apparatus of claim 1 wherein the semiconducting layer comprises PN or PIN junctions.
7. The image acquisition apparatus of claim 1 wherein the semiconducting layer comprises blocking contacts.
8. An X-ray image acquisition apparatus comprising a conversion layer for generating electrons in response to X-ray radiation photons, said conversion layer comprising an edge end defining a thickness of the conversion layer, and a first and a second side surfaces extending from said edge end defining a width and a length of the conversion layer, said conversion layer being configured to be edgewise to incident X-ray radiation photons such that X-ray photons enter the conversion layer edgewise and traverse at least partially through the conversion layer in a widthwise direction, wherein the conversion layer is in a wavy form.
9. The X-ray image acquisition apparatus of claim 8 wherein the conversion layer is comprised of a material having a high atomic number.
10. The X-ray image acquisition apparatus of claim 8 wherein the conversion layer is made of a metal selected from the group consisting of tungsten, gold, and tantalum.
11. The X-ray image acquisition apparatus of claim 8 wherein the conversion layer is a tungsten foil having a thickness from about 0.01 to about 1 mm.
12. The X-ray image acquisition apparatus of claim 8 wherein the conversion layer is configured such that X-ray photons enter the edge end of the conversion layer at a substantially normal angle to the edge end.
13. The X-ray image acquisition apparatus of claim 8 wherein the conversion layer is configured such that X-ray photons enter the edge end of the conversion layer at an angle from about 1 to 45 degrees off normal to the edge end.
14. The image acquisition apparatus of claim 8 wherein the semiconducting layer comprises PN or PIN junctions.
15. The image acquisition apparatus of claim 8 wherein the semiconducting layer comprises blocking contacts.
16. An X-ray image acquisition apparatus, comprising:
a plurality of conversion layers substantially parallel among each other, each of the conversion layers comprising an edge end defining a thickness of the conversion layer, and a first and a second side surfaces extending from said edge end defining a width and a length of the conversion layer, said conversion layer being configured to be edgewise to incident X-ray radiation photons such that X-ray photons enter the conversion layer edgewise and traverse at least partially through the conversion layer in a widthwise direction, said conversion layer generating electrons in response to X-ray photons and ejecting electrons through said first and second surfaces; and
a plurality of semiconducting layers substantially parallel among each other, each of the semiconducting layers being placed adjacent to one of the plurality of the conversion layers generating electron-hole pairs in response to electrons ejected from the one adjacent conversion layer.
17. An image acquisition apparatus comprising a conversion layer for generating electrons in response to electromagnetic radiation photons, and a semiconducting layer adjacent to the conversion layer for generating electron-hole pairs in response to electrons generated by the conversion layer, wherein the semiconducting layer comprises a plurality of islands forming pixels of the image acquisition apparatus.