Nanostructures and methods for manufacturing the same
View Patent ↗A resonant tunneling diode, and other one dimensional electronic, photonic structures, and electromechanical MEMS devices, are formed as a heterostructure in a nanowhisker by forming length segments of the whisker with different materials having different band gaps.
1. A method of fabricating a semiconductor device, comprising:
merging semiconductor nanorods in a nanorod array through coalescence into a continuous planar layer after fabrication of the nanorods;
forming V-shaped grooves in an upper surface a substrate of a first crystalline material;
providing a plurality of catalytic seed particles in said V-shaped grooves;
growing the semiconductor nanorods comprising a second crystalline material from the catalytic seed particles; and
the step of merging comprises continuing to grow said second crystalline material using the nanorods as growth nucleation sites, thereby to create the continuous planar layer of said second crystalline material extending over said substrate of said first crystalline material.
2. A method according to claim 1 , wherein the semiconductor nanorods comprise III-V semiconductor nanowhiskers.
3. A method according to claim 1 , further comprising:
forming apertures in a mask using nano-imprint lithography (NIL);
forming catalyst material in the apertures; and
growing the semiconductor nanorods from the catalyst material.
4. A method according to claim 1 , wherein the upper surface of said substrate of the first crystalline material is a <100> surface, and the V-shaped grooves expose <111> surfaces in said V-shaped grooves.
5. A method for forming an epitaxial layer of a second crystalline material on a substrate of a first crystalline material different from said second crystalline material, the method comprising:
providing the substrate containing nanowhiskers of said second crystalline material;
growing said second crystalline material, using the nanowhiskers as growth sites, whereby to create an epitaxial layer of said second crystalline material extending over said substrate;
forming V-shaped grooves in an upper surface of said substrate of the first crystalline material;
providing a plurality of catalytic seed particles in said V-shaped grooves;
growing the nanowhiskers of said second crystalline material from the catalytic seed particles; and
the step of growing said second crystalline material comprises continuing to grow said second crystalline material, using the nanowhiskers as growth nucleation sites.
6. A method according to claim 5 , wherein the upper surface of said substrate of the first crystalline material is a <100> surface, and the V-shaped grooves expose <111> surfaces in said V-shaped grooves.
7. A method according to claim 5 , wherein the nanowhiskers comprise III-V semiconductor nanowhiskers.
8. A method according to claim 7 , further comprising:
forming apertures in a mask using nano-imprint lithography (NIL);
forming catalyst material in the apertures; and
growing the semiconductor nanowhiskers from the catalyst material.