High frequency power amplifier
View Patent ↗A small, high performance high frequency power amplifier enables easily adjusting and switching the impedance. The high frequency power amplifier module includes a first semiconductor chip including one or a plurality of high frequency amplification devices, and a second semiconductor chip including one or more high frequency matching circuit devices and one or more switching devices. The second semiconductor chip includes the matching circuit for a high frequency amplifier device. The second semiconductor chip also includes a circuit composed of a capacitance and a switching device connected in series or parallel to the capacitance. The switching device switches on or off so that the capacitance is connected or is not connected as a part of the matching circuit.
1. A high frequency power amplifier comprising:
a first semiconductor chip including a main amplification stage having a first high frequency amplification device; and
a second semiconductor chip including a main matching stage having a first switching device;
wherein the main amplification stage has a first output pin operable to output a first signal amplified by the first high frequency amplification device; and
the main matching stage has a first input pin operable to receive the first signal, and
a first high frequency matching circuit device operable to match the first signal; and
the first switching device is any one of a field effect transistor and a heterojunction field effect transistor.
2. The high frequency power amplifier described in claim 1 , wherein said first semiconductor chip and said second semiconductor chip are rendered in unison.
3. The high frequency power amplifier described in claim 1 , further comprising:
a substrate on which said first semiconductor chip and said second semiconductor chip are mounted; and
a high frequency circuit device including a microstrip line formed on the substrate.
4. The high frequency power amplifier described in claim 1 , further comprising:
a substrate on which said first semiconductor chip and said second semiconductor chip are mounted; and
a passive device mounted on the substrate.
5. The high frequency power amplifier described in claim 1 , wherein:
said second semiconductor chip includes a capacitance; and
the first switching device is connected to the capacitance.
6. The high frequency power amplifier described in claim 1 , wherein:
said second semiconductor chip includes an inductor; and
the first switching device is connected to the inductor.
7. The high frequency power amplifier described in claim 1 , wherein the first switching device operates as a capacitance when in the off state.
8. The high frequency power amplifier described in claim 1 , wherein said second semiconductor chip includes a logic circuit.
9. The high frequency power amplifier described in claim 1 , wherein said second semiconductor chip includes a capacitance of 10 pF or greater.
10. The high frequency power amplifier described in claim 1 , wherein at least one of said first and second semiconductor chips has a via hole connecting the front and back sides of the semiconductor chip.
11. The high frequency power amplifier described in claim 1 , wherein the first high frequency amplification device is a heterojunction bipolar transistor.
12. The high frequency power amplifier described in claim 1 , wherein said second semiconductor chip includes at least a part of a supply circuit operable to supply a current or voltage signal supplied to the first high frequency amplification device.
13. The high frequency power amplifier described in claim 1 , wherein said first semiconductor chip includes a capacitance connected on one side to the first output pin and on the other side to ground.