Image transfer process for thin film component definition

1. A method for fabricating a thin film component, comprising:

forming a wafer having a thin film layer, a release layer, and a patterned layer of photoresist;

transferring the pattern of the layer of photoresist to the release layer and the thin film layer;

adding a layer of metal to the wafer;

heating the wafer to a predetermined temperature for a period of time sufficient to cause deformation of the photoresist to an extent that the photoresist creates cracks in the metal layer;

applying a solvent to dissolve at least a portion of the release layer, the solvent penetrating the cracks in the metal layer to reach the release layer; and

removing the release layer and any portions of the layers above the release layer.

2. A method as recited in claim 1 , wherein the wafer further includes an etch-stop layer, wherein the pattern is transferred to the release layer by reactive ion etching.

3. A method as recited in claim 2 , wherein the etch-stop layer is carbon based.

4. A method as recited in claim 1 , wherein the pattern is transferred to the thin film layer by milling.

5. A method as recited in claim 1 , wherein the release layer also functions as an antireflective coating.

6. A method as recited in claim 1 , wherein the layer of photoresist is capable of resolving lines 60 nm in width or smaller.

7. A method as recited in claim 1 , wherein the photoresist is resistant to O 2 reactive ion etching.

8. A method as recited in claim 1 , wherein the photoresist contains silicon.

9. A method as recited in claim 1 , wherein the layer of metal forms a biasing magnet.

10. A method as recited in claim 1 , wherein the layer of metal forms a lead.

11. A method as recited in claim 1 , wherein the pattern is transferred to the thin film layer by ion milling.

12. A method for fabricating a magnetic head, comprising:

forming a wafer having a sensor film;

adding a release layer to the wafer above the sensor, the release layer being soluble in a solvent;

forming a layer of photoresist above the release layer;

processing the layer of photoresist to define a pattern, the patterned layer of photoresist defining a track width of the sensor film under covered regions of the layers, the covered regions being under the patterned layer of photoresist;

substantially removing uncovered regions of the release layer;

substantially removing uncovered regions of the sensor film;

adding a layer of metal to the wafer;

baking the wafer at a predetermined temperature for a period of time sufficient to cause deformation of the photoresist to an extent that the photoresist creates cracks in the metal layer;

applying a solvent to the wafer to dissolve at least a portion of the release layer, the solvent penetrating the cracks in the metal layer to reach the release layer; and

removing portions of the layers above the release layer.

13. A method as recited in claim 12 , further comprising adding an etch-stop layer above the sensor film, wherein the etch-stop layer is carbon based.

14. A method as recited in claim 12 , wherein the release layer also functions as an antireflective coating.

15. A method as recited in claim 12 , wherein the layer of photoresist is capable of resolving lines 60 nm in width or smaller.

16. A method as recited in claim 12 , wherein the photoresist is resistant to O 2 reactive ion etching.

17. A method as recited in claim 12 , wherein the photoresist contains silicon.

18. A method as recited in claim 12 , wherein the layer of metal forms a biasing magnet.

19. A method as recited in claim 12 , wherein the layer of metal forms a lead.