FERROELECTRIC INFORMATION STORAGE MEDIUM AND METHOD OF MANUFACTURING THE SAME

1 . A ferroelectric information storage medium comprising:

a substrate;

an electrode formed on the substrate; and

ferroelectric nanodots formed on the electrode,

wherein the ferroelectric nanodots are separated from each other, and a plurality of the ferroelectric nanodots form a single bit region.

2 . The ferroelectric information storage medium of claim 1 , wherein the ferroelectric nanodots have a diameter of 15 nm or less.

3 . The ferroelectric information storage medium of claim 1 , wherein the ferroelectric nanodots are formed in a monolayer on the electrode.

4 . The ferroelectric information storage medium of claim 1 , wherein the ferroelectric nanodots are formed of at least one selected from PbTiO 3 , KNbO 3 , and BiFeO 3 .

5 . The ferroelectric information storage medium of claim 1 , wherein the substrate is formed of at least one selected from silicon, glass and alumina.

6 . The ferroelectric information storage medium of claim 1 , further comprising a protective layer on the ferroelectric nanodots.

7 . The ferroelectric information storage medium of claim 6 , further comprising a lubricating layer on the protective layer.

8 . A method of manufacturing a ferroelectric information storage medium, comprising:

a) forming an electrode on a substrate;

b) forming a precursor nanodot layer that comprises a metal material for forming a ferroelectric material on the electrode;

c) supplying a reaction gas to the precursor nanodot layer to cause a reaction with precursor nanodots of the precursor nanodot layer to form ferroelectric nanodots; and

d) forming the ferroelectric nanodots by annealing the precursor nanodot layer.

9 . The method of claim 8 , wherein the forming of the precursor nanodot layer comprises coordinating an organic dispersion agent on a surface of each of the precursor nanodots of the precursor nanodot layer.

10 . The method of claim 8 , wherein the precursor nanodot layer is formed of a plurality of precursor nanodots separated from each other.

11 . The method of claim 8 , wherein the precursor nanodots have a diameter of 15 nm or less.

12 . The method of claim 9 , wherein the forming of the precursor nanodot layer comprises thin-filming a solution in which precursor nanodots are dispersed on the electrode.

13 . The method of claim 12 , wherein the thin-filming is performed using at least one selected from spin coating, dip coating, blade coating, screen printing, chemical self-assembling, Langmuir-Blodgett method, and spray coating.

14 . The method of claim 12 , wherein the solution comprises the precursor nanodots with a concentration of 0.05 to 1 wt %.

15 . The method of claim 12 , wherein a solvent of the solution is at least one organic solvent selected from chloroform, dichloromethane, hexane, toluene, ether, acetone, ethanol, pyridine, and tetrahydrofuran.

16 . The method of claim 8 , wherein the precursor nanodot layer is a monolayer of the precursor nanodots.

17 . The method of claim 9 , wherein the forming of the precursor nanodot layer further comprises removing the organic dispersion agent.

18 . The method of claim 17 , wherein the removing of the organic dispersion agent comprises annealing the precursor nanodot layer or O 2 plasma processing the precursor nanodot layer.

19 . The method of claim 9 , wherein the forming of the precursor nanodot layer comprises forming precursor nanodots comprising at least one selected from Ti, Nb, and Fe.

20 . The method of claim 9 , wherein the forming of the ferroelectric nanodots comprises annealing at a temperature of 400 to 900° C.

21 . The method of claim 9 , wherein the forming of the ferroelectric nanodots comprises forming the nanodot layer of at least one selected from PbTiO 3 , KNbO 3 , and BiFeO 3 .

22 . The method of claim 8 , wherein the ferroelectric nanodots have a diameter of 15 nm or less.