DURABLE WIDEBAND ANTENNA FABRICATED ON LOW RESISTIVITY SILICON SUBSTRATE
An antenna that is easily fabricated on a low resistivity CMOS-grade silicon substrate is herein described. The antenna has a reasonable radiation efficiency. One generalized non-limiting embodiment includes employing an antenna that resonates at about 5.8 GHz. Another generalized non-limiting embodiment includes a differential feed operationally coupled to a first and a second half-antenna portion. Each of the herein described antennas have an efficiency of greater than approximately 20%.
1 . A method of fabricating an antenna, the method comprising:
etching a central portion of a silicon substrate to form two independent antenna halves;
applying a photoresist material to the etched central area; and
treating the photoresist material to harden the photoresist material.
2 . The method of claim 1 , wherein the treating includes exposing the photoresist material to ultraviolet (UV) energy.
3 . The method of claim 1 , wherein treating the photoresist material comprises baking the photoresist material.
4 . The method of claim 1 , wherein the etching includes etching the central portion such that the antenna halves resonate at about 5.8 GHz.
5 . The method of claim 1 , wherein etching includes etching the central portion such that the antenna halves and photoresist material form an antenna approximately 12 mm in length.
6 . The method of claim 5 , wherein the etching includes etching the central portion such that the antenna halves and photoresist material form an antenna approximately 2.8 mm in width.
7 . The method of claim 6 , wherein the etching includes etching the central portion such that the antenna halves and photoresist material form an antenna approximately 400 um in thickness.
8 . The method of claim 1 , wherein the etching a central portion of a silicon substrate to form two independent antenna halves comprises etching a central portion of a silicon substrate to form two independent antenna halves shaped at first triangular and then rectangular in elongated pentagons.
9 . The method of claim 1 , wherein the etching a central portion of a silicon substrate to form two independent antenna halves comprises etching a central portion of a silicon substrate to form two independent antenna halves shaped at first triangular and then rectangular in elongated pentagons with at least one slit in the rectangular area.
10 . The method of claim 1 further comprising positioning a differential feed in the central portion.
11 . An antenna comprising:
a first half-antenna portion;
a second half-antenna portion separated from the first half-antenna portion; and
a photoresist material connecting the first and second half-antenna portions.
12 . The antenna of claim 11 , wherein the antenna resonates at about 5.8 GHz.
13 . The antenna of claim 11 , wherein the first and second half-antenna portions both include at least one slit.
14 . The antenna of claim 11 further comprising a differential feed operationally coupled to the first and second half-antenna portions.
15 . The antenna of claim 11 , further comprising a silicon nitride layer operationally coupled to the first and second half-antenna portions.
16 . The antenna of claim 11 , wherein the first and second half-antenna portions shaped at first triangular and then rectangular in elongated pentagons.
17 . The antenna of claim 11 , wherein the antenna has a gain of about −2.19 dB.
18 . The antenna of claim 10 , wherein the antenna has an efficiency of greater than approximately 20%.
19 . Antenna apparatus comprising.
first means for radiating a RF field;
second means for radiating a RF field; and
means for supporting the first and second means wherein the radiation efficiency is greater than approximately 20%.
20 . Apparatus according to claim 19 wherein the means for supporting includes a photoresist material.