Method for manufacturing contact structures of wiring
View Patent ↗First, a conductive material of aluminum-based material is deposited and patterned to form a gate wire including a gate line, a gate pad, and a gate electrode. A gate insulating layer is formed by depositing nitride silicon in the range of more than 300° C. for 5 minutes, and a semiconductor layer an ohmic contact layer are sequentially formed. Next, a conductor layer of a metal such as Cr is deposited and patterned to form a data wire include a data line intersecting the gate line, a source electrode, a drain electrode and a data pad. Then, a passivation layer is deposited and patterned to form contact holes exposing the drain electrode, the gate pad and the data pad. Next, indium zinc oxide is deposited and patterned to form a pixel electrode, a redundant gate pad and a redundant data pad respectively connected to the drain electrode, the gate pad and the data pad.
1. A method for manufacturing a contact structure of a wire, comprising the steps of:
forming a wire made of an aluminum-based material;
depositing an insulating layer covering the wire;
patterning the insulating layer to form a contact hole exposing the wire;
performing an annealing process; and
depositing using a sputtering process a conductive layer made of indium zinc oxide (IZO) and electrically connected to the wire,
wherein the sputtering process is performed at a temperature below 200° C, wherein the annealing process is performed immediately before depositing the conductive layer.
2. The method of claim 1 , wherein the insulating layer is made of nitride silicon.
3. The method of claim 1 , wherein the insulating layer is deposited in the range of 280-400° C.
4. The method of claim 3 , wherein the insulating layer is deposited for a period in the range of 5-40 minutes.
5. The method of claim 1 , wherein the contact hole is more than 0.5 mm×15 μm and less than 2 mm×60 μm.
6. The method of claim 1 , wherein a contact resistance of the aluminum-based material and the indium zinc oxide is less than 10% of a resistance of the wire.
7. The method of claim 6 , wherein the contact resistance is less than 0.15 μΩcm 2 .