Digital memory with fine grain write operation

1. A method of operating digital memory, the method comprising:

reading, by access circuitry that is coupled to a plurality of bit lines of a memory array for the digital memory, a multi-bit data word from a subset of a plurality of memory cells of the memory array;

writing, by the access circuitry, a bit of the multi-bit data word, wherein said writing includes driving, by a sense amplifier circuit of the access circuitry, a bit line associated with a memory cell associated with the bit of the multi-bit data word to a voltage level corresponding to a logical value of the bit, and wherein said driving excludes other bit lines associated with other ones of the subset of the plurality of memory cells associated with the multi-bit data word from being driven; and

precharging the bit line associated with the memory cell, wherein said precharging excludes the other bit lines.

2. The method of claim 1 , further comprising:

determining, by a controller, to perform said writing to the multi-bit data word; and

performing, by the access circuitry, an intervening access operation on the plurality of memory cells, wherein:

said determining occurs at a first time;

said performing an intervening access operation occurs at a second time;

said writing occurs at a third time; and

the second time is later than the first time and the third time is later than the second time.

3. The method of claim 2 , further comprising:

identifying, by the controller, an idle time of the digital memory; and

selecting, by the controller, the idle time as the third time.

4. The method of claim 1 , wherein the multi-bit data word contains an erroneous bit, and wherein the bit is a corrected bit corresponding to the erroneous bit.

5. The method of claim 4 , further comprising:

detecting, by an error correction machine, the erroneous bit; and

receiving, by the controller, the corrected bit from the error correction machine.

6. An apparatus, comprising:

a memory array including a plurality of memory cells and a plurality of bit lines; and

access circuitry coupled to the plurality of memory cells of the memory array via the plurality of bit lines, wherein the access circuitry is configured to perform a read operation on a multi-bit data word wherein the access circuitry is further configured to perform a write operation on the multi-bit data word at a granularity level equal to one bit, and wherein the access circuitry includes:

a sense amplifier circuit configured to drive, during the write operation, a bit line associated with a memory cell of the multi-bit data word to a voltage level, wherein the voltage level corresponds to a logical value of a bit to be written to the memory cell, and wherein the sense amplifier circuit is further configured to exclude other bit lines of the multi-bit data word from being driven during the write operation; and

precharge circuitry coupled to the plurality of memory cells, wherein the precharge circuitry is configured to precharge the multi-bit data word.

7. The apparatus of claim 6 , wherein the precharge circuitry is configured to precharge the multi-bit data word at a precharge granularity level that is finer than a data word size of the multi-bit data word.

8. A system, comprising:

a digital memory, including:

a memory array comprising a plurality of memory cells and a plurality of bit lines; and

access circuitry coupled to the plurality of memory cells of the memory array via the plurality of bit lines, wherein the access circuitry is configured to perform a read operation on a multi-bit data word, wherein the access circuitry is further configured to perform a write operation on the multi-bit data word at a granularity level equal to one bit, wherein the write operation writes a corrected bit to the multi-bit data word, and wherein the access circuitry includes:

a sense amplifier circuit configured to drive, during the write operation, a bit line associated with a memory cell of the multi-bit data word to a voltage level, wherein the voltage level corresponds to a logical value of the corrected bit to be written to the memory cell, and wherein the sense amplifier circuit is further configured to exclude other bit lines of the multi-bit data word from being driven during the write operation;

precharge circuitry coupled to the plurality of memory cells, wherein the precharge circuitry is configured to precharge the multi-bit data word; and

a controller coupled to the digital memory via a plurality of terminals, wherein the controller comprises logic coupled to the plurality of terminals, and wherein the logic is configured to:

determine the corrected bit to be written to the multi-bit data word; and

output the corrected bit to the digital memory via the terminals.

9. The system of claim 8 , wherein the digital memory further comprises both a first memory device and a second memory device, wherein the multi-bit data word is distributedly stored in both the first memory device and the second memory device, and wherein the logic is further configured to write to only a selected one of the first memory device and the second memory device.

10. An apparatus, comprising:

a memory array including a plurality of memory cells and a plurality of bit lines;

means for reading a multi-bit data word at a granularity level equal to a data word size of the memory array, wherein the multi-bit data word comprises a number of memory cells equal to the data word size, and for driving, during a write operation, a bit line of a memory cell of the multi-bit data word to a voltage level, wherein the voltage level corresponds to a logical value of a bit to be written to the memory cell, and wherein the write operation excludes other bit lines of the multi-bit data word from being driven during the write operation; and

means for precharging one or more bit lines of the memory array at a granularity level finer than the data word size.

11. The apparatus of claim 10 , further comprising:

means for determining the bit to be written to the memory cell; and

means for detecting an erroneous data bit of the data word, wherein the bit to be written to the memory cell is a corrected bit corresponding to the erroneous bit.

12. An article of manufacture, comprising a non-transitory computer-readable medium including a plurality of computer-readable hardware design language instructions, or compilation of the hardware design language instructions, wherein the hardware design language instructions specify an implementation of the apparatus of claim 6 as an integrated circuit.

13. The article of manufacture of claim 12 , wherein the hardware design language comprises either VHDL or Verilog.

14. The apparatus of claim 6 , wherein the multi-bit data word contains an erroneous bit, and wherein the bit to be written to the memory cell is a corrected bit that corresponds to the erroneous bit.