Nitride semiconductor laser device and method for fabrication thereof
View Patent ↗A nitride semiconductor light-emitting device includes a nitride semiconductor substrate of which at least part of a surface is formed from a nitride semiconductor and a nitride film semiconductor growth layer laid on the surface of the nitride semiconductor substrate. A carved region in the shape of a depressed portion may be formed on the surface of the nitride semiconductor substrate. The carved region may have an inverted tapered shape or a tapered shape in cross-section. Alternatively, or additionally, the nitride film semiconductor growth layer may include a gallium nitride film or an aluminum containing gallium nitride film where the nitride film semiconductor growth layer makes contact with the nitride semiconductor substrate. Alternatively, or additionally, the nitride film semiconductor growth layer may include a light-emitting portion formed at a location 20 μm or more away from the carved region.
1. A nitride semiconductor light-emitting device, comprising:
a nitride semiconductor substrate having a surface comprising a nitride semiconductor; and
a nitride film semiconductor growth layer formed on the surface of the nitride semiconductor substrate,
wherein a carved region that is a depressed portion having an inverted tapered shape in cross section is formed on the surface of the nitride semiconductor substrate,
the nitride film semiconductor growth layer comprises a contact layer that makes contact with the surface of the nitride semiconductor substrate, the contact layer comprising a GaN film or an aluminum containing GaN film, and
the nitride film semiconductor growth layer comprises a laser stripe configured to function as a light-emitting portion, the laser stripe being formed 20 μm or more away from the carved region.
2. A nitride semiconductor light-emitting device, comprising:
a nitride semiconductor substrate having a surface comprising a nitride semiconductor; and
a nitride film semiconductor growth layer formed on the surface of the nitride semiconductor substrate,
wherein a carved region that is a depressed portion having a tapered shape in cross section is formed on the surface of the nitride semiconductor substrate,
the nitride film semiconductor growth layer comprises a contact layer that makes contact with the surface of the nitride semiconductor substrate, the contact layer comprising a GaN film of 2 μm or less in thickness, and
the nitride film semiconductor growth layer comprises a laser stripe configured to function as a light-emitting portion, the laser stripe being formed 20 μm or more away from the carved region.
3. A nitride semiconductor light-emitting device, comprising:
a nitride semiconductor substrate having a surface comprising a nitride semiconductor; and
a nitride film semiconductor growth layer formed on the surface of the nitride semiconductor substrate,
wherein a carved region that is a depressed portion having a tapered shape in cross section is formed on the surface of the nitride semiconductor substrate,
the nitride film semiconductor growth layer comprises a contact layer that makes contact with the surface of the nitride semiconductor substrate, the contact layer comprising an aluminum containing GaN film of 2 μm or less in thickness, and
the nitride film semiconductor growth layer comprises a laser stripe configured to function as a light-emitting portion, the laser stripe being formed 20 μm or more away from the carved region.
4. A nitride semiconductor light-emitting device, comprising:
a nitride semiconductor substrate having a surface comprising a nitride semiconductor; and
a nitride film semiconductor growth layer formed on the surface of the nitride semiconductor substrate,
wherein a carved region that is a depressed portion is formed on the surface of the nitride semiconductor substrate,
the nitride film semiconductor growth layer comprises a side growth portion formed on a side face of the carved region, the side growth portion having a thickness of 20 μm or less, and
the nitride film semiconductor growth layer comprises a laser stripe configured to function as a light-emitting portion, the laser stripe being formed 20 μm or more away from the carved region.
5. The nitride semiconductor light-emitting device according to claim 4 ,
wherein the nitride film semiconductor growth layer comprises a contact layer that makes contact with the surface of the nitride semiconductor substrate, the contract layer comprising a GaN film of 2 μm or less in thickness.
6. The nitride semiconductor light-emitting device according to claim 4 ,
wherein the nitride film semiconductor growth layer comprises a contact layer that makes contact with the surface of the nitride semiconductor substrate, the contact layer comprising an aluminum containing GaN film.
7. The nitride semiconductor light-emitting device according to claim 1 ,
wherein an orientation of a principal plane of the nitride semiconductor substrate has a off angle of 2° or less relative to an orientation of a crystal plane.