Apparatus for manufacturing semiconductor device
An apparatus according to the present invention, includes an etching solution tank which contains etching solution used for a wet etching process, a wet etching process to a semiconductor wafer being carried out in the etching solution tank; a nitrogen gas supply component which supplies a nitrogen gas (N2), which is used for a wet etching process in the etching solution tank; a flow regulating component which delivers the nitrogen gas (N2) supplied from said nitrogen gas supply component into said etching solution tank during a wet etching process, and which continues to deliver said nitrogen gas into said etching solution tank during a standby phase in which a wet etching process is not being performed; and a bubbling component which bubbles said nitrogen gas (N2), supplied from said nitrogen gas supply component, in said etching solution tank during a wet etching process.
1 . An apparatus for manufacturing a semiconductor device, comprising:
an etching solution tank which contains etching solution used for a wet etching process, a wet etching process to a semiconductor wafer being carried out in the etching solution tank;
a nitrogen gas supply component which supplies a nitrogen gas (N2), which is used for a wet etching process in the etching solution tank;
a flow regulating component which delivers the nitrogen gas (N2) supplied from said nitrogen gas supply component into said etching solution tank during a wet etching process, and which continues to deliver said nitrogen gas into said etching solution tank during a standby phase in which a wet etching process is not being performed; and
a bubbling component which bubbles said nitrogen gas (N2), supplied from said nitrogen gas supply component, in said etching solution tank during a wet etching process.
2 . An apparatus according to claim 1 , wherein said flow regulating component comprises:
a first pipe which delivers said nitrogen gas into said etching solution tank during a wet etching process; and
a second pipe which delivers said nitrogen gas into said etching solution tank during a wet etching process and during said standby phase.
3 . An apparatus according to claim 2 , wherein
said first pipe is designed so as to deliver a greater amount of nitrogen gas into said etching solution tank than said second pipe.
4 . An apparatus according to claim 3 , wherein
said second pipe is designed so as to deliver 10% or less of the amount of nitrogen gas, delivered through said first pipe, into said etching solution tank.
5 . An apparatus according to claim 1 , further comprising:
a valve capable of shutting off and opening the flow of said nitrogen gas in said first pipe.
6 . An apparatus according to claim 5 , wherein
said nitrogen gas is supplied into said etching solution tank through said first pipe during a wet etching process on an intermittent basis at predetermined intervals by opening and closing said valve.
7 . An apparatus according to claim 6 , wherein
a period of time in that said nitrogen gas is supplied into said etching solution through said first pipe during a wet etching process, is half of the time or less in that said semiconductor wafer is dipped in the etching solution in said etching solution tank.
8 . An apparatus according to claim 7 , wherein
a period of time in that said nitrogen gas is supplied into said etching solution through said first pipe during a wet etching process is 1 to 3% of the time in that the semiconductor wafer is dipped in the etching solution inside said etching solution tank.
9 . An apparatus according to claim 1 , wherein
said etching solution contains ammonium fluoride.
10 . An apparatus according to claim 9 , wherein
said etching solution also contains hydrofluoric acid and acetic acid.