Laser mask and method of crystallization using the same
View Patent ↗A laser mask and method of crystallization using the same that can produce a polycrystalline silicon thin film having uniform crystallization characteristics. According to the present invention, a method of crystallization using a laser mask having a reference pattern in a first block and the reverse pattern of the reference pattern in a second block includes providing a substrate having a silicon thin film; positioning the first block of the laser mask over a portion of the silicon film and irradiating a first laser beam through the first block; and moving either the laser mask or the substrate to position the second block of the laser mask over the portion of the silicon film and irradiating a second laser beam through the second block.
1. A method for fabricating a flat panel display device having a thin film transistor as a switching device comprising:
providing a substrate having a silicon thin film; and
crystallizing the silicon film into a polycrystalline silicon thin film to form an active layer of the thin film transistor using a laser mask, the laser mask has a reference pattern in a first block and the reverse pattern of the reference pattern in a second block.
2. The method of claim 1 , wherein crystallizing the silicon film into a polycrystalline silicon thin film further includes: positioning the first block of the laser mask over a portion of the silicon film and irradiating a first laser beam through the first block; and moving either the laser mask or the substrate to position the second block of the laser mask over the portion of the silicon film and irradiating a second laser beam through the second block.
3. The method of claim 1 , wherein the flat panel device is a liquid crystal display device or an electroluminescence diode.
4. A flat panel display device having a thin film transistor as a switching device comprising:
an active layer of the thin film transistor including a polycrystalline silicon thin film,
wherein the polycrystalline silicon thin film includes a polygon shape grain boundary,
wherein the polycrystalline silicon thin film includes first crystals crystallized by a first crystallization and second crystals crystallized by a second crystallization and
wherein the first crystals have a radial grains growing toward centers of the first crystals and the second crystals grow in an outside direction of the first crystals, starting from circumferences of the first crystals.
5. The device of claim 4 , wherein the polygon shape includes a regular triangle, a regular square, a regular hexagon and a regular octagon.
6. The device of claim 4 , wherein the flat panel device is a liquid crystal display device or an electroluminescence diode.
7. The device of claim 4 , wherein the first crystals crystallized by the first crystallization correspond to a reference pattern in a first block of a mask and the second crystals crystallized by the second crystallization correspond to a reverse pattern of the reference pattern in a second block of the mask.