Method of making an antireflective silica coating, resulting product, and photovoltaic device comprising same
View Patent ↗A low-index silica coating may be made by forming a silica precursor having a radiation curable composition including a radiation curable monomer and/or a photoinitiator, and also including a silica sol comprising a silane and/or a colloidal silica. The silica precursor may be deposited on a substrate (e.g., glass substrate) to form a coating layer. The coating layer may then be cured via exposure to electromagnetic radiation, such as UV radiation. Then, the cured coating layer may be fired using temperature(s) of from about 550 to 700° C., in forming the low-index silica based coating. The low-index silica based coating may be used as an antireflective (AR) film on a front glass substrate of a photovoltaic device (e.g., solar cell) in certain example instances.
1. A method of making a low-index silica based coating, the method comprising:
forming a silica precursor comprising (a) a radiation curable composition comprising a radiation curable monomer and a photoinitiator, and (b) a silica sol comprising a silane and/or a colloidal silica;
depositing the silica precursor on a glass substrate to form a coating layer;
curing the coating layer using at least exposure to electromagnetic radiation; and
after said curing, firing the coating layer in an oven at a temperature of from about 550 to 700° C. for a duration of from about 1 to 10 minutes, to form the low-index silica based coating, wherein the low-index silica based coating has a refractive index that is lower than a refractive index of the glass substrate.
2. The method of claim 1 , wherein the step of depositing comprises spin-coating, roller-coating, or spray-coating.
3. The method of claim 1 , wherein said curing comprises exposing the coating layer to ultraviolet (UV) radiation for curing.
4. The method of claim 3 , wherein said curing comprises exposing the coating layer to UV radiation for from about 5 to 120 seconds.
5. The method of claim 1 , wherein the silica sol does comprises a silane which comprises (3-glycidoxypropyl)trimethoxysilane.
6. The method of claim 1 , wherein the silica precursor further comprises an antifoaming additive.
7. The method of claim 1 , wherein the silica precursor further comprises a solvent comprising an alcohol.
8. The method of claim 1 , wherein a weight percentage of the photoinitiator in the radiation curable composition ranges between 0.1 and 10% by weight.
9. The method of claim 1 , wherein a weight percentage of silicon dioxide in the silica precursor ranges between from 0.1 to 10% by weight of the silica precursor.
10. The method of claim 1 , wherein the radiation curable composition comprises a UV-curable epoxy and/or a UV-curable acrylate.
11. The method of claim 1 , wherein the low-index coating has a thickness between 500 and 4000 Å after firing in the oven.
12. The method of claim 1 , wherein the low-index coating has a refractive index less than 1.32 at 550 nm.
13. The method of claim 1 , wherein the low-index coating has a refractive index less than 1.28 at 550 nm.
14. The method of claim 1 , wherein the low-index coating has a refractive index less than 1.25 at 550 nm.
15. A photovoltaic device comprising a photoelectric transfer film and the low-index coating made according to claim 1 , wherein the low-index coating is provided on a light incident side of a front glass substrate of the photovoltaic device.
16. A method of making a photovoltaic device including a low-index silica based coating used in an antireflective coating, the method comprising:
forming a silica precursor comprising (a) a radiation curable composition comprising a radiation curable monomer, and (b) a silica sol comprising a silane and/or a colloidal silica;
depositing the silica precursor on a glass substrate to form a coating layer;
curing the coating layer using at least exposure to electromagnetic radiation;
after said curing, firing the coating layer using elevated temperature(s) of from about 550 to 700° C. to form the low-index silica based coating; and
using the glass substrate with the low-index silica based coating thereon as a front glass substrate of the photovoltaic device so that the low-index silica based coating is provided on a light incident side of the glass substrate.
17. The method of claim 16 , wherein the step of depositing comprises spin-coating, roller-coating, or spray-coating.
18. The method of claim 16 , wherein said curing comprises exposing the coating layer to ultraviolet (UV) radiation for curing.
19. The method of claim 18 , wherein said curing comprises exposing the coating layer to UV radiation for from about 5 to 120 seconds.
20. A photovoltaic device comprising:
a photovoltaic film, and at least a glass substrate on a light incident side of the photovoltaic film;
an antireflection coating provided on the glass substrate;
wherein the antireflection coating comprises at least a layer provided directly on and contacting the glass substrate, the layer produced using a method comprising the steps of: forming a silica precursor comprising (a) a radiation curable composition comprising a radiation curable monomer and a photoinitiator and (b) a silica sol comprising a silane and/or a colloidal silica; depositing the silica precursor on a glass substrate to form a coating layer; curing the coating layer through exposure to electromagnetic radiation; and firing the coating layer in an oven at a temperature ranging from 550 to 700° C. for a duration between 1 and 10 minutes; and
wherein a layer comprising an oxide of silicon is provided over the antireflection coating.