Light emitting devices
Light-emitting devices, and related components, systems and methods are disclosed.
1 . (canceled)
2 . A device comprising:
a III-nitride semiconductor structure including an active region disposed between a first n-type region and a p-type region;
a photonic crystal structure disposed in at least a portion of the first n-type region;
a second n-type region disposed between the photonic crystal structure and the active region; and
a reflector disposed on at least a portion of a surface of the p-type region opposite the active region.
3 . The device of claim 2 wherein a majority of light emitted by the active region that exits the semiconductor structure exits through a surface of the semiconductor structure opposite the surface on which the reflector is disposed.
4 . The device of claim 2 further comprising a first contact electrically connected to one of the first and second n-type regions and a second contact electrically connected to the p-type region, wherein the first and second contacts are disposed on the sane side of the semiconductor structure.
5 . The device of claim 4 wherein one of the first and second contacts is reflective.
6 . The device of claim 4 wherein the second contact is reflective.
7 . The device of claim 4 wherein the second contact comprises Ag.
8 . The device of claim 4 further comprising at least one via extending through the p-type region and the active region to one of the first and second n-type regions, wherein the first contact is disposed within the via.
9 . The device of claim 4 further comprising a material disposed between the first and second contacts.
10 . The device of claim 9 wherein the material is a dielectric.
11 . The device of claim 2 further comprising a first contact electrically connected to one of the first and second n-type regions and a second contact electrically connected to the p-type region, wherein the first and second contacts are disposed on opposite sides of the semiconductor structure.
12 . The device of claim 2 wherein the photonic crystal structure comprises a planar lattice of holes.
13 . The device of claim 11 wherein the planar lattice includes one or more lattice types selected from the group consisting of a triangular lattice, a square lattice, a hexagonal lattice, and a honeycomb lattice.
14 . The device of claim 11 wherein a lattice type, lattice constant, hole diameter, and hole depth of the planar lattice of holes are selected to create a predetermined radiation pattern.
15 . The device of claim 13 wherein greater than 50% of radiation exiting the semiconductor structure is emitted in an exit cone defined by an angle of 45 degrees to an axis normal to a surface of the semiconductor structure.
16 . A device comprising:
a III-nitride semiconductor structure including an active region disposed between a first part of a n-type region and a p-type region;
a photonic crystal structure disposed in at least a portion of the n-type region;
a second part of the n-type region disposed between the photonic crystal structure and the active region; and
a reflector disposed on at least a portion of a surface of the p-type region opposite the active region.