Semiconductor device capable of suppressing current concentration in pad and its manufacture method
View Patent ↗An interlayer insulating film is formed on a semiconductor substrate. An intra-layer insulating film is formed on the interlayer film. A recess is formed through the intra-layer film. The recess has a pad-part and a wiring-part continuous with the pad-part. The pad-part is wider than the width of the wiring-part. Convex regions are left in the pad-part. The convex regions are disposed in such a manner that a recess area ratio in a near wiring area superposed upon an extended area of the wiring-part into the pad-part, within a first frame area having as an outer periphery an outer periphery of the pad-part and having a first width, becomes larger than a recess area ratio in a second frame area having as an outer periphery an inner periphery of the first frame area and having a second width. A conductive film is filled in the recess.
1. A method of manufacturing a semiconductor device comprising the steps of:
(a) forming a first interlayer insulating film made of insulating material on a semiconductor substrate having semiconductor elements formed on a surface of the substrate;
(b) forming a first intra-layer insulating film made of insulating material on the first interlayer insulating film;
(c) forming a recess through the first intra-layer insulating film, wherein the recess has a pad part and a wiring part continuous with the pad part, the pad part has a width wider than a width of the wiring part, a plurality of convex regions are left in the pad part, and the recess is formed so that the convex regions are disposed in such a manner that a recess area ratio in a near wiring area superposed upon an extended area of the wiring part into the pad part, within a first frame area having as an outer periphery an outer periphery of the pad part and having a first width, becomes larger than a recess area ratio in a second frame area having as an outer periphery an inner periphery of the first frame area and having a second width;
(d) forming a first film made of conductive material on the semiconductor substrate, the first film being filled in the recess; and
(e) removing an upper region of the first film to form a first pad made of the first film left in the recess;
wherein the convex regions are disposed regularly in the second frame area along a first direction at a first period P, and a width of the first frame area along the first direction is equal to or wider than said first period P,
wherein said first period P is a distance from one convex region to another convex region of said plurality of convex regions including a width of said one convex region.
2. A method according to claim 1 , further comprising steps of, after the step (e):
(f) forming a second interlayer insulating film made of insulating material on the first intra-layer insulating film and the left first film;
(g) forming at least one via hole through the second interlayer insulating film, the via hole being included in the first pad as viewed along a direction parallel to a substrate normal; and
(h) forming a second pad on the second interlayer insulating film, the second pad being connected to the first pad via a region in the via hole.
3. A method according to claim 2 , further comprising a step of, after the step (h):
(i) inspecting the semiconductor elements by making a conductive probe in contact with the second pad.
4. A method according to claim 3 , further comprising a step of, after the step (i):
(j) scribing the semiconductor substrate along a line inside the second pad.
5. A method according to claim 1 , wherein the convex regions are not disposed in the first frame area.
6. A method according to claim 1 , wherein:
the convex regions are not left in a central area on an inner side of the second frame area; and after the step (e), the method further comprising the steps of:
forming a second interlayer insulating film made of insulating material on the first intra-layer insulating film and the left first film;
forming a via hole through the second interlayer insulating film, the via hole being included in the central area as viewed along a direction parallel to a substrate normal;
forming a second pad on the second interlayer insulating film, the second pad being connected to the first pad via a region in the via hole; and
wire-bonding a conductive wire to the second pad, a contact area between the conductive wire and the second pad extending to an area on an outer side of the via hole as viewed along a direction parallel to a substrate normal.
7. A method of manufacturing a semiconductor device comprising the steps of:
(a) forming a first interlayer insulating film made of insulating material on a semiconductor substrate having semiconductor elements formed on a surface of the substrate;
(b) forming a first intra-layer insulating film made of insulating material on the first interlayer insulating film;
(c) forming a recess through the first intra-layer insulating film, wherein the recess has a pad part and a wiring part continuous with the pad part, the pad part has a width wider than a width of the wiring part, a plurality of convex regions are left in the pad part, and the recess is formed so that the convex regions are disposed in such a manner that a recess area ratio in a near wiring area superposed upon an extended area of the wiring part into the pad part, within a first frame area having as an outer periphery an outer periphery of the pad part and having a first width, becomes larger than a recess area ratio in a second frame area having as an outer periphery an inner periphery of the first frame area and having a second width;
(d) forming a first film made of conductive material on the semiconductor substrate, the first film being filled in the recess;
(e) removing an upper region of the first film to form a first pad made of the first film left in the recess;
(f) forming a second interlayer insulating film made of insulating material on the first intra-layer insulating film and the left first film;
(g) forming at least one via hole through the second interlayer insulating film, the via hole being included in the first pad as viewed along a direction parallel to a substrate normal;
(h) forming a second pad on the second interlayer insulating film, the second pad being connected to the first pad via a region in the via hole;
(i) inspecting the semiconductor elements by making a conductive probe in contact with the second pad; and
(j) scribing the semiconductor substrate along a line inside the second pad.
8. A method of manufacturing a semiconductor device comprising the steps of:
(a) forming a first interlayer insulating film made of insulating material on a semiconductor substrate having semiconductor elements formed on a surface of the substrate;
(b) forming a first intra-layer insulating film made of insulating material on the first interlayer insulating film;
(c) forming a recess through the first intra-layer insulating film, wherein the recess has a pad part and a wiring part continuous with the pad part, the pad part has a width wider than a width of the wiring part, a plurality of convex regions are left in the pad part, and the recess is formed so that the convex regions are disposed in such a manner that a recess area ratio in a near wiring area superposed upon an extended area of the wiring part into the pad part, within a first frame area having as an outer periphery an outer periphery of the pad part and having a first width, becomes larger than a recess area ratio in a second frame area having as an outer periphery an inner periphery of the first frame area and having a second width;
(d) forming a first film made of conductive material on the semiconductor substrate, the first film being filled in the recess; and
(e) removing an upper region of the first film to form a first pad made of the first film left in the recess;
wherein the convex regions are disposed regularly in the second frame area along a first direction at a first pitch, and a width of the first frame area along the first direction is equal to or wider than the first pitch.
9. A method according to claim 8 , further comprising steps of, after the step (e):
(f) forming a second interlayer insulating film made of insulating material on the first intra-layer insulating film and the left first film;
(g) forming at least one via hole through the second interlayer insulating film, the via hole being included in the first pad as viewed along a direction parallel to a substrate normal; and
(h) forming a second pad on the second interlayer insulating film, the second pad being connected to the first pad via a region in the via hole.
10. A method according to claim 9 , further comprising a step of, after the step (h):
(i) inspecting the semiconductor elements by making a conductive probe in contact with the second pad.
11. A method according to claim 10 , further comprising a step of, after the step (i):
(j) scribing the semiconductor substrate along a line inside the second pad.
12. A method according to claim 8 , wherein the convex regions are not disposed in the first frame area.
13. A method according to claim 8 , wherein:
the convex regions are not left in a central area on an inner side of the second frame area; and after the step (e), the method further comprising the steps of:
forming a second interlayer insulating film made of insulating material on the first intra-layer insulating film and the left first film;
forming a via hole through the second interlayer insulating film, the via hole being included in the central area as viewed along a direction parallel to a substrate normal;
forming a second pad on the second interlayer insulating film, the second pad being connected to the first pad via a region in the via hole; and
wire-bonding a conductive wire to the second pad, a contact area between the conductive wire and the second pad extending to an area on an outer side of the via hole as viewed along a direction parallel to a substrate normal.
14. A method of manufacturing a semiconductor device comprising the steps of:
(a) forming a first interlayer insulating film made of insulating material on a semiconductor substrate having semiconductor elements formed on a surface of the substrate;
(b) forming a first intra-layer insulating film made of insulating material on the first interlayer insulating film;
(c) forming a recess through the first intra-layer insulating film, wherein the recess has a pad part and a wiring part continuous with the pad part, the pad part has a width wider than a width of the wiring part, a plurality of convex regions are left in the pad part, and the recess is formed so that the convex regions are disposed in such a manner that a recess area ratio in a near wiring area superposed upon an extended area of the wiring part into the pad part, within a first frame area having as an outer periphery an outer periphery of the pad part and having a first width, becomes larger than a recess area ratio in a second frame area having as an outer periphery an inner periphery of the first frame area and having a second width;
(d) forming a first film made of conductive material on the semiconductor substrate, the first film being filled in the recess; and
(e) removing an upper region of the first film to form a first pad made of the first film left in the recess;
wherein a width W 1 is in a range from 5 μm to 10 μm, and L 1 /W 1 is 35% or higher, wherein W 1 corresponds to the width of the wiring part, and L 1 corresponds to the first width.
15. A method of manufacturing a semiconductor device comprising the steps of:
(a) forming a first interlayer insulating film made of insulating material on a semiconductor substrate having semiconductor elements formed on a surface of the substrate;
(b) forming a first intra-layer insulating film made of insulating material on the first interlayer insulating film;
(c) forming a recess through the first intra-layer insulating film, wherein the recess has a pad part and a wiring part continuous with the pad part, the pad part has a width wider than a width of the wiring part, a plurality of convex regions are left in the pad part, and the recess is formed so that the convex regions are disposed in such a manner that a recess area ratio in a near wiring area superposed upon an extended area of the wiring part into the pad part, within a first frame area having as an outer periphery an outer periphery of the pad part and having a first width, becomes larger than a recess area ratio in a second frame area having as an outer periphery an inner periphery of the first frame area and having a second width;
(d) forming a first film made of conductive material on the semiconductor substrate, the first film being filled in the recess; and
(e) removing an upper region of the first film to form a first pad made of the first film left in the recess;
wherein a width W 1 is narrower than 5 μm, and L 1 /W 1 is 30% or higher, wherein W 1 corresponds to the width of the wiring part, and L 1 corresponds to the first width.
16. A method of manufacturing a semiconductor device comprising the steps of:
(a) forming a first interlayer insulating film made of insulating material on a semiconductor substrate having semiconductor elements formed on a surface of the substrate;
(b) forming a first intra-layer insulating film made of insulating material on the first interlayer insulating film;
(c) forming a recess through the first intra-layer insulating film, wherein the recess has a pad part and a wiring part continuous with the pad part, the pad part has a width wider than a width of the wiring part, a plurality of convex regions are left in the pad part, and the recess is formed so that the convex regions are disposed in such a manner that a recess area ratio in a near wiring area superposed upon an extended area of the wiring part into the pad part, within a first frame area having as an outer periphery an outer periphery of the pad part and having a first width, becomes larger than a recess area ratio in a second frame area having as an outer periphery an inner periphery of the first frame area and having a second width;
(d) forming a first film made of conductive material on the semiconductor substrate, the first film being filled in the recess; and
(e) removing an upper region of the first film to form a first pad made of the first film left in the recess;
wherein:
the convex regions are not left in a central area on an inner side of the second frame area; and after the step (e), the method further comprises the steps of:
forming a second interlayer insulating film made of insulating material on the first intra-layer insulating film and the left first film;
forming a via hole through the second interlayer insulating film, the via hole being included in the central area as viewed along a direction parallel to a substrate normal;
forming a second pad on the second interlayer insulating film, the second pad being connected to the first pad via a region in the via hole; and
wire-bonding a conductive wire to the second pad, a contact area between the conductive wire and the second pad extending to an area on an outer side of the via hole as viewed along a direction parallel to a substrate normal.