Method of forming an insulative film
View Patent ↗A method of forming an insulative film includes a step of vacuum laminating an insulative organic material on a substrate that has a peripheral ring electrode formed in a peripheral region of the substrate and a device element(s) formed inside the peripheral region, and has a surface configuration including raised parts. A first dummy pattern is formed in a region between the peripheral ring electrode and the device element on the substrate.
1. A method of forming an insulative film comprising:
preparing a substrate having a device element thereon to thereby form a raised part on the substrate,
preparing a first dummy pattern on the substrate adjacent to the device element, and
vacuum-laminating an insulative organic material on the substrate to cover the device element and the dummy pattern.
2. The method of forming an insulative film according to claim 1 , wherein said substrate further includes a peripheral ring electrode in a peripheral region of the substrate, said device element being formed inside of the peripheral region.
3. The method of forming an insulative film according to claim 2 , wherein said first dummy pattern is formed in a region between the peripheral ring electrode and the device element on the substrate.
4. The method of forming an insulative film according to claim 3 , wherein said insulative organic material is a dry film resist.
5. The method of forming an insulative film according to claim 3 , wherein said first dummy pattern is a plating pattern formed on the substrate, a through-hole pattern formed on the substrate, or a depression pattern formed by pits dug from a surface of the substrate.
6. The method of forming an insulative film according to claim 5 , wherein said first dummy pattern is a pattern of a rectangle or a pattern of an ellipse, each of said pattern having a longitudinal direction at right angle, or parallel to an edge line of the peripheral ring electrode, or combination thereof.
7. The method of forming an insulative film according to claim 5 , wherein said first dummy pattern is a pattern of a square or a pattern of a circle.
8. The method of forming an insulative film according to claim 7 , wherein said first dummy pattern is a pattern comprising a plurality of squares or circles arranged in a lattice.
9. The method of forming an insulative film according to claim 6 , wherein said first dummy pattern and the device element are formed to have a distance substantially equal to a distance between device elements formed on the substrate.
10. The method of forming an insulative film according to claim 4 , wherein said first dummy pattern comprises a combination of patterns selected from a plating pattern formed on the substrate, a through-hole pattern formed on the substrate, and a depression pattern formed by pits dug from a surface of the substrate.
11. The method of forming an insulative film according to claim 3 , wherein said first dummy pattern is formed to have a same configuration as a part or a whole of a pattern of the device element, the first dummy pattern having a same repetition period as a repetition period of device elements formed on the substrate.
12. The method of forming an insulative film according to claim 1 , wherein said first dummy pattern is formed in a side region of the device element.
13. The method of forming an insulative film according to claim 2 , wherein said first dummy pattern is formed in a side region of the device element.
14. A method of forming an insulative film according to claim 3 , further comprising forming a second dummy pattern in a side region of the device element.
15. The method of forming an insulative film according to claim 12 , wherein said insulative organic material is a dry film resist.
16. The method of forming an insulative film according to claim 12 , wherein said first dummy pattern is a plating pattern formed on the substrate.
17. The method of forming an insulative film according to claim 16 , wherein said plating pattern is a rectangular pattern arranged parallel to the side region of the device element.
18. The method of forming an insulative film according to claim 16 , wherein said plating pattern has a triangular shape or a trapezoidal shape.
19. The method of forming an insulative film according to claim 16 , wherein said plating pattern is composed of a, plurality of components, said components having approximately rectangular shape.