Semiconductor device and manufacturing method thereof, and liquid crystal display device

1. A semiconductor device, comprising:

a substrate;

a semiconductor device portion formed on the substrate in a protruding state and having a semiconductor element;

a stepped portion formed along a surface of the semiconductor device portion and a surface of the substrate;

an insulating reentrant-angle compensating film formed on a surface of the stepped portion, for compensating for at least a part of a reentrant-angle shape of the stepped portion;

a wiring layer formed along a surface of the reentrant-angle compensating film and connected to the semiconductor device portion, said wiring layer covering the reentrant-angle portion of the stepped portion; and

wherein the reentrant-angle portion of the stepped portion is located at an elevation below that of a source region and a gate electrode of the semiconductor device,

a switching element is formed in the substrate so that at least a part of the switching element, including the switching element's gate electrode, is not covered with the reentrant-angle compensating film, and

the switching element, the wiring layer, the reentrant-angle compensating film, and the semiconductor device portion are covered with an interlayer insulating film.

2. The semiconductor device according to claim 1 , wherein the reentrant-angle compensating film has a convex curved surface.

3. The semiconductor device according to claim 1 , wherein the reentrant-angle compensating film is formed from a photosensitive resin.

4. The semiconductor device according to claim 1 , wherein

the semiconductor element of the semiconductor device portion has a semiconductor layer, and an insulating film that covers the semiconductor layer, and

the semiconductor layer is attached to the surface of the substrate through at least the insulating film, and a part of the semiconductor layer is separated and removed along a separation layer.

5. The semiconductor device according to claim 1 , wherein the reentrant-angle compensating film is formed from an interlayer insulating film that covers the semiconductor device portion.

6. A method for manufacturing a semiconductor device, comprising the steps of:

forming a semiconductor device portion having a semiconductor element, on a substrate in a protruding state;

forming a stepped portion at an elevation below a source region of the semiconductor device along a surface of the semiconductor device portion and a surface of the substrate;

forming an insulating reentrant-angle compensating film on the stepped portion for compensating for at least a part of a reentrant-angle shape of the stepped portion;

forming, along a surface of the reentrant-angle compensating film, a wiring layer that is connected to the semiconductor device portion, said wiring layer covering the reentrant-angle portion of the stepped portion,

wherein the reentrant-angle portion of the stepped portion is located at an elevation below that of the source region and a gate electrode of the semiconductor device, and

forming a switching element in the substrate so that at least a part of the switching element, including the switching element's gate electrode, is not covered with the reentrant-angle compensating film, wherein

the switching element, the wiring layer, the reentrant-angle compensating film, and the semiconductor device portion are covered with an interlayer insulating film.

7. The method for manufacturing a semiconductor device according to claim 6 , wherein

the semiconductor element of the semiconductor device portion has a semiconductor layer, and an insulating film that covers the semiconductor layer, and

the semiconductor layer is formed by first forming a separation layer by implanting a separating material into a semiconductor substrate by ion implantation, and then attaching the semiconductor layer to the surface of the substrate through the insulating film, and then separating and removing a part of the semiconductor substrate along the separation layer.

8. A liquid crystal display device comprising: an active matrix substrate having a plurality of pixels arranged in a matrix; a counter substrate facing the active matrix substrate; and a liquid crystal layer formed between the active matrix substrate and the counter substrate, wherein

the active matrix substrate includes a transparent substrate, a semiconductor device portion formed on the substrate in a protruding state and having a semiconductor element, a stepped portion formed along a surface of the semiconductor device portion and a surface of the substrate, an insulating reentrant-angle compensating film formed on a surface of the stepped portion, for compensating for at least a part of a reentrant-angle shape of the stepped portion, a wiring layer formed along a surface of the reentrant-angle compensating film and connected to the semiconductor device portion, said wiring layer covering the reentrant-angle portion of the stepped portion,

wherein the reentrant-angle portion of the stepped portion is located at an elevation below that of a source region and a gate electrode of the semiconductor device,

a switching element is formed in the substrate so that at least a part of the switching element, including the switching element's gate electrode is not covered with the reentrant-angle compensating film, and

the switching element, the wiring layer, the reentrant-angle compensating film, and the semiconductor device portion are covered with an interlayer insulating film.

9. The liquid crystal display device of claim 8 , wherein the semiconductor element of the semiconductor device portion has a semiconductor layer, and an insulating film that covers the semiconductor layer, and wherein the semiconductor layer is attached to the surface of the substrate through the insulating film and a part of the semiconductor layer is separated and removed along a separation layer.