IP Library Granted Patent US 7,763,795
Granted Patent B2
US 7,763,795 · App. 11/885,364 · Granted Jul 27, 2010

Photoelectric conversion device and method for manufacturing the same

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Quick Facts
Patent No.
US 7,763,795
App. No.
11/885,364
Granted
Jul 27, 2010
Kind
B2
Abstract

Disclosed are a method for effectively preventing the contact between the surface of a titanium oxide semiconductor electrode and an electrolyte solution, a photoelectric conversion device exhibiting high photoelectric conversion efficiency, and a dye-sensitized solar cell using the said photoelectric conversion device. The photoelectric conversion device comprising a dye-sensitized semiconductor electrode is manufactured by letting a semiconductor adsorb a sensitizing dye, then rinsing the dye-adsorbed semiconductor, and finally letting the rinsed dye-adsorbed semiconductor adsorb a carboxylic acid in supercritical carbon dioxide. The adsorption of a dye and the rinsing are performed preferably in supercritical carbon dioxide in the presence or absence of an alcohol of 1-4 carbon atoms.

Claims (4)

1. A method for manufacturing a photoelectric conversion device having a dye-sensitized semiconductor electrode which comprises adsorbing a sensitizing dye on a semiconductor, rinsing the dye-adsorbed semiconductor, and adsorbing a carboxylic acid on the rinsed dye-adsorbed semiconductor in supercritical carbon dioxide.

2. A method for manufacturing a photoelectric conversion device as described in claim 1 wherein the adsorption of the carboxylic acid is effected in supercritical carbon dioxide at a pressure of 8-30 Mpa and a temperature of 40-60° C.

3. A method for manufacturing a photoelectric conversion device as described in claim 1 or 2 wherein the adsorption of the sensitizing dye is performed in supercritical carbon dioxide and the rinsing is performed in supercritical carbon dioxide.

4. A method for manufacturing a photoelectric conversion device as described in claim 1 or 2 wherein the sensitizing dye is dissolved in an alcohol of 1-4 carbon atoms, adsorbed on a semiconductor in supercritical carbon dioxide at a pressure of 10-25 Mpa and a temperature of 40-60° C., and rinsed in supercritical carbon dioxide or in supercritical carbon dioxide containing an alcohol of 1-4 carbon atoms.

Assignments (3)
CHANGE OF NAME Recorded Mar 20, 2013
From: NIPPON STEEL CHEMICAL CO., LTD.
To: NIPPON STEEL & SUMIKIN CHEMICAL CO., LTD.
Reel/Frame 030049/0771 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 27, 2011
From: NATIONAL UNIVERSITY CORPORATION KYUSHU INSTITUTE OF TECHNOLOGY
To: NIPPON STEEL CHEMICAL CO., LTD.
Reel/Frame 026189/0770 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 28, 2007
From: HAYASE, SHUZI; KONO, MITSURU; YAMASHITA, KOICHI; YAMAGUCHI, YOSHIHIRO
To: NATIONAL UNIVERSITY CORPORATION KYUSHU INSTITUTE OF TECHNOLOGY
Reel/Frame 020302/0684 →