Method and apparatus for plasma processing
View Patent ↗A method and an apparatus for plasma processing which can accurately monitor an ion current applied to the surface of a sample. Predetermined gas is exhausted via an exhaust port by a turbo-molecular pump while introducing the gas within the vacuum chamber from a gas supply device, and the pressure within the vacuum chamber is kept at a predetermined value by a pressure regulating valve. A high-frequency power supply for a plasma source supplies a high-frequency power to a coil provided near a dielectric window to generate inductively coupled plasma within the vacuum chamber. A high-frequency power supply for the sample electrode for supplying the high-frequency power to the sample electrode is provided. A matching circuit for the sample electrode and a high-frequency sensor are provided between the sample electrode high-frequency power supply and the sample electrode. An ion current applied to the surface of a sample can be accurately monitored buy using the high-frequency sensor and an arithmetic device.
1. A plasma processing method in which a sample is placed on a sample electrode within a vacuum chamber, then gas within the vacuum chamber is exhausted while supplying the gas within the vacuum chamber from a gas supply device, and a high-frequency power is supplied to the sample electrode via a matching circuit for the sample electrode while controlling a pressure within the vacuum chamber to a predetermined value thereby to generate plasma within the vacuum chamber, thereby accelerating ions in the plasma toward a surface of the sample to collide with the surface to process the sample, comprising:
a step of supplying a high-frequency voltage to the sample electrode under a condition of not generating the plasma to measure a high-frequency voltage V 0 and a current I 0 supplied to the sample electrode by a high-frequency sensor provided between the sample electrode matching circuit and the sample electrode;
a step of measuring a high-frequency voltage V 1 and a current I 1 supplied to the sample electrode by the high-frequency sensor when the plasma is generated to subject the sample to a plasma processing;
a step of obtaining a substantial high-frequency current based on charged particles movement flowing into the sample electrode as Ir=I 1 −I 0 ·V 1 /V 0 ; and
a step of controlling a processing condition based on Ir thus obtained.
2. The plasma processing method according to claim 1 , wherein the step of controlling a processing condition includes a step of controlling the processing condition so that Ir becomes a predetermined value.
3. The plasma processing method according to claim 1 , wherein the plasma is generated within the vacuum chamber by supplying the high-frequency power to a plasma source.
4. The plasma processing method according to claim 3 , wherein the step of controlling the processing condition so that Ir becomes a predetermined value is a step of changing the high-frequency power supplied to the plasma source.
5. The plasma processing method according to claim 1 , wherein the step of controlling the processing condition so that Ir becomes a predetermined value is a step of changing the high-frequency power supplied to the sample electrode so that Ir becomes the predetermined value.
6. The plasma processing method according to claim 1 , wherein the step of controlling the processing condition so that Ir becomes a predetermined value is a step of changing a predetermined gas flow rate so that Ir becomes the predetermined value.
7. The plasma processing method according to claim 1 , wherein the step of controlling the processing condition based on Ir is a step of terminating the processing when a value obtained by time-integrating Ir during processing of the sample reaches a predetermined value.
8. The plasma processing method according to claim 1 , wherein the plasma processing method is a plasma doping method of introducing impurities in the surface of the sample.
9. The plasma processing method according to claim 1 , wherein the step of measuring V 0 and I 0 is a step of measuring them preliminarily by using another dummy sample in place of the sample.
10. A plasma processing method according to claim 1 , wherein the step of measuring V 0 , I 0 , V 1 and I 1 includes a step of sampling a voltage and a current to obtain waveforms, and a step of subjecting high-frequency voltage waveform and current waveform thus measured to a Fourier transformation to divide into fundamental waveform components V 01 , I 01 , V 11 , I 11 and harmonics waveform components V 0 n, I 0 n, V 1 n, I 1 n (n is 2, 3, - - - and represents n-th harmonics) to obtain Ir as Ir=Σ(I 1 n−I 0 n·V 1 n/V 0 n) (Σ represents to add n which is 1 or more).
11. The plasma processing method according to claim 10 , wherein the sampling frequency used in the step of obtaining the waveforms is a frequency sufficient for measuring a third harmonics of the fundamental frequency of the high-frequency voltage supplied to the sample electrode, and it is desirable to consider at least up to the third harmonics at a time of obtaining Ir.
12. The plasma processing method according to claim 10 , wherein the sampling frequency used in the step of obtaining the waveforms is a frequency sufficient for measuring a fifth harmonics of the fundamental frequency of the high-frequency voltage supplied to the sample electrode, and it is desirable to consider at least up to the fifth harmonics at a time of obtaining Ir.
13. The plasma processing method according to claim 1 , wherein the step of measuring V 0 , I 0 , V 1 and I 1 includes a step of sampling a voltage and a current to obtain waveforms, and a step of subjecting high-frequency voltage waveform and current waveform thus measured to a Fourier transformation to divide into fundamental waveform components V 01 , I 01 , V 11 , I 11 and harmonics waveform components V 0 n, I 0 n, V 1 n, I 1 n (n is 2, 3, - - - and represents n-th harmonics) to obtain Ir as Ir=I 11 −I 01 ·V 11 /V 01 +ΣI 1 n (Σ represents to add n which is 2 or more).
14. The plasma processing method according to claim 13 , wherein the sampling frequency used in the step of obtaining the waveforms is a frequency sufficient for measuring a third harmonics of the fundamental frequency of the high-frequency voltage supplied to the sample electrode, and it is desirable to consider at least up to the third harmonics at a time of obtaining Ir.
15. The plasma processing method according to claim 13 , wherein the sampling frequency used in the step of obtaining the waveforms is a frequency sufficient for measuring a fifth harmonics of the fundamental frequency of the high-frequency voltage supplied to the sample electrode, and it is desirable to consider at least up to the fifth harmonics at a time of obtaining Ir.
16. A plasma processing apparatus, comprising:
a vacuum chamber;
a sample electrode;
a gas supply device which supplies gas within the vacuum chamber;
an exhaust device which exhausts the gas within the vacuum chamber;
a pressure control device which controls a pressure within the vacuum chamber;
a high-frequency power supply for the sample electrode which supplies high-frequency power to the sample electrode;
a matching circuit for the sample electrode which performs impedance matching of the sample electrode;
a high-frequency sensor which is provided between the sample electrode matching circuit and the sample electrode; and
an arithmetic device which calculates, based on measurement values of the high-frequency sensor, a substantial high-frequency current based on charged particles movement flowing into the sample electrode.
17. The plasma processing apparatus according to claim 16 , further comprising:
a plasma source and a high-frequency power supply for the plasma source that supplies a high-frequency power to the plasma source.
18. The plasma processing apparatus according to claim 16 wherein the high-frequency sensor includes a sampling portion which samples voltage and current, and the arithmetic part includes a dividing part which subjects the measured high-frequency voltage waveform and current waveform to Fourier transformation to divide into fundamental waveform components V 01 , I 01 , V 11 , I 11 and harmonics waveform components V 0 n, I 0 n, V 1 n, I 1 n (n is 2, 3, - - - and represents n-th harmonics), and a summing part which obtains a substantial high-frequency current Ir based on charged particles movement flowing into the sample electrode as Ir=Σ(I 1 n−I 0 n·V 1 n/V 0 n) (Σ represents to add n which is 1 or more).
19. The plasma processing apparatus according to claim 18 , wherein the sampling frequency used in the step of obtaining the waveforms is a frequency sufficient for measuring a third harmonics of the fundamental frequency of the high-frequency voltage supplied to the sample electrode, and it is desirable to consider at least up to the third harmonics at a time of obtaining Ir.
20. The plasma processing apparatus according to claim 18 , wherein the sampling frequency used in the step of obtaining the waveforms is a frequency sufficient for measuring a fifth harmonics of the fundamental frequency of the high-frequency voltage supplied to the sample electrode, and it is desirable to consider at least up to the fifth harmonics at a time of obtaining Ir.
21. The plasma processing apparatus according to claim 16 , wherein the high-frequency sensor includes a sampling portion which samples voltage and current, and the arithmetic part includes a dividing part which subjects the measured high-frequency voltage waveform and current waveform to Fourier transformation to divide into fundamental waveform components V 0 I, I 01 , V 11 , I 11 and harmonics waveform components V 0 n, I 0 n, V 1 n, I 1 n (n is 2, 3, - - - and represents n-th harmonics), and a summing part which obtains a substantial high-frequency current Ir based on charged particles movement flowing into the sample electrode as Ir=I 11 −I 01 ·V 11 /V 01 +ΣI 1 n (Σ represents to add n which is 2 or more).
22. The plasma processing apparatus according to claim 21 , wherein the sampling frequency used in the step of obtaining the waveforms is a frequency sufficient for measuring a third harmonics of the fundamental frequency of the high-frequency voltage supplied to the sample electrode, and it is desirable to consider at least up to the third harmonics at a time of obtaining Ir.
23. The plasma processing apparatus according to claim 21 , wherein the sampling frequency used in the step of obtaining the waveforms is a frequency sufficient for measuring a fifth harmonics of the fundamental frequency of the high-frequency voltage supplied to the sample electrode, and it is desirable to consider at least up to the fifth harmonics at a time of obtaining Ir.