Semiconductor device and method of producing the same
View Patent ↗In a semiconductor device having element isolation made of a trench-type isolating oxide film 13 , large and small dummy patterns 11 of two types, being an active region of a dummy, are located in an isolating region 10 , the large dummy patterns 11 b are arranged at a position apart from actual patterns 9 , and the small dummy patterns 11 a are regularly arranged in a gap at around a periphery of the actual patterns 9 , whereby uniformity of an abrading rate is improved at a time of abrading an isolating oxide film 13 a is improved, and surface flatness of the semiconductor device becomes preferable.
1. A semiconductor device comprising:
a semiconductor substrate;
two active device regions formed on a principal surface of the semiconductor substrate;
an isolating region formed between the two active device regions;
a plurality of first dummy patterns arranged regularly in rows and columns at a first pitch in the isolating region; and
a plurality of second dummy patterns arranged regularly in rows and columns at a second pitch in the isolating region, wherein
the second pitch is larger than the first pitch,
each of the second dummy patterns has a larger area than each of the first dummy patterns,
the two active device regions are composed of a first active device region and a second active device region,
the first dummy patterns and the second dummy patterns are arranged between the first active device region and the second active device region, and
the first dummy patterns and the second dummy patterns are arranged in the following order along the principal surface of the substrate: the first dummy patterns, the second dummy patterns, and the first dummy patterns, respectively.
2. A semiconductor device comprising:
a semiconductor substrate;
a first active device region and a second active device region formed on a principal surface of the semiconductor substrate;
an isolating region formed between the first active device region and the second device active region;
a plurality of first dummy patterns arranged regularly at a first pitch in the isolating region;
a plurality of second dummy patterns arranged regularly at a second pitch in the isolating region; and
a plurality of third dummy patterns arranged regularly at the first pitch in the isolating region, wherein
each of the second dummy patterns has a larger area than each of the first dummy patterns,
each of the third dummy patterns has a same area as each of the first dummy patterns,
the first dummy patterns, the sec 6 nd dummy patterns and the third dummy patterns are arranged between the first active device region and the second active device region,
the first dummy patterns, the second dummy patterns and the third dummy patterns are arranged in the following order along the principal surface of the substrate: the first dummy patterns, the second dummy patterns and the third dummy patterns, respectively, and
the second pitch is larger than the first pitch.