Method of manufacturing semiconductor laser device including light shield plate

1. A method of manufacturing a semiconductor laser device comprising:

forming a light emission structure by sequentially depositing material layers including a first clad layer, an active layer and a second clad layer on a substrate;

sequentially depositing a light shield film and a protection film on a light emission face of the light emission structure;

removing a portion of the light shield film corresponding to the area of the light emission structure above and including the first clad layer using a first etchant which selectively etches the light shield film; and

removing the protection film.

2. The method of claim 1 , wherein the removing of protection film is performed using a wet etching process using a second etchant which selectively etches the protection film.

3. The method of claim 1 , wherein the light shield film absorbs or reflects light.

4. The method of claim 1 , wherein the light shield film contains a material layer which is formed of at least one of Si, Ge, SiO 2 , TiO 2 , Ai 2 O 3 , AiN, ZrO 2 , metal materials and dielectric multilayers.

5. The method of claim 1 , wherein the substrate is one of a GaN substrate, a SIC substrate and a sapphire substrate.

6. The method of claim 5 , wherein a contact layer is further formed between the substrate and the first clad layer, and the light shield film covers the ends of the substrate and the contact layer after removing a portion of the light shield film.

7. The method of claim 6 , wherein the contact layer is formed of Al x Ga 1−x (0≦x≦0.05).

8. A method of manufacturing a semiconductor laser device comprising:

forming a light emission structure by sequentially depositing a first clad layer, an active layer and a second clad layer on a substrate;

forming a light shield film which covers at least an area below the first clad layer of a light emission face of the light emission structure;

forming a protection film on the light shield film so that the upper end of the protection film may not exceed the upper end of the light shield film; and

removing a portion of the light shield film corresponding to an area of the light emission face of the light emission structure including and above the first clad layer; and

removing the protection film.

9. The method of claim 8 , wherein the removing of the light shield film is performed using a wet etching process using a first etchant which selectively etches the light shield film.

10. The method of claim 8 , wherein the removing of protection film is performed by a wet process using a second etchant which selectively etches the protection film.

11. The method of claim 8 , wherein the light shield film absorbs or reflects light.

12. The method of claim 8 , wherein the light shield film contains a material layer formed of at least one of Si, Ge, SiO 2 , TiO 2 , Ai 2 O 3 , AiN, ZrO 2 , metal materials and dielectric multilayers.

13. The method of claim 8 , wherein the substrate is one of a GaN substrate, a SIC substrate and a sapphire substrate.

14. The method of claim 13 , wherein a contact layer is further formed between the substrate and the first clad layer and the light shield film covers the ends of the substrate and the contact layer after removing a portion of the light shield film.

15. The method of claim 14 , wherein the contact layer is formed of Al x Ga 1−x (0≦x≦0.05).

16. A method of manufacturing a semiconductor laser device comprising:

forming a light emission structure by sequentially depositing a first clad layer, an active layer and a second clad layer on a substrate;

sequentially depositing a light shield film and a protection film, which are formed of different materials from each other, on the light emission face of the light emission structure;

selectively etching only the light shield film and removing a portion of the light shield film corresponding to an area of the light emission face of the light emission structure including and above the first clad layer; and

removing the protection film.

17. The method of claim 16 , wherein the selective etching of only the light shield film is performed using a wet etching process using a first etchant which selectively etches the light shield film.

18. The method of claim 16 , wherein the removing of the protection film is performed using a wet etching process using a second etchant which selectively etches the protection film.

19. The method of claim 16 , wherein the light shield film absorbs or reflects light.

20. The method of claim 16 , wherein the light shield film contains a material layer formed of at least one of Si, Ge, SiO 2 , TiO 2 , Ai 2 O 3 , AiN, ZrO 2 , metal materials and dielectric multilayers.

21. The method of claim 16 , wherein the substrate is one of a GaN substrate, a SiC substrate and a sapphire substrate.

22. The method of claim 21 , wherein a contact layer is further formed between the substrate and the first clad layer, and the light shield film covers the ends of the substrate and the contact layer after removing a portion of the light shield film.

23. The method of claim 22 , wherein the contact layer is formed of Al x Ga 1−x (0≦x≦0.05).