Thin-film device and method of fabricating the same
View Patent ↗A thin-film device includes a first electrical insulator, an oxide-semiconductor film formed on the first electrical insulator, and a second electrical insulator formed on the oxide-semiconductor film, the oxide-semiconductor film defining an active layer. The oxide-semiconductor film is comprised of a first interface layer located at an interface with the first electrical insulating insulator, a second interface layer located at an interface with the second electrical insulator, and a bulk layer other than the first and second interface layers. A density of oxygen holes in at least one of the first and second interlayer layers is smaller than a density of oxygen holes in the bulk layer.
1. A thin-film device including a first electrical insulator, an oxide-semiconductor film formed on said first electrical insulator, and a second electrical insulator formed on said oxide-semiconductor film,
said oxide-semiconductor film defining an active layer,
said oxide-semiconductor film being comprised of a first interface layer located at an interface with said first electrical insulator, a second interface layer located at an interface with said second electrical insulator, and a bulk layer other than said first and second interface layers,
wherein oxygen hole densities in both of said first and second interface layers are smaller than a density of oxygen holes in said bulk layer.
2. The thin-film device as set forth in claim 1 , wherein said oxide-semiconductor film is composed of amorphous oxide containing at least one of Zn, Ga and In.
3. The thin-film device as set forth in claim 1 , wherein said oxide-semiconductor film is composed of crystalline oxide containing at least one of Zn, Ga and In.
4. The thin-film device as set forth in claim 3 , wherein said oxide-semiconductor film is formed by crystallizing amorphous oxide with laser irradiation thereto.
5. The thin-film device as set forth in claim 1 , wherein said oxide-semiconductor film is formed by dissolving powdered oxide semiconductor into solvent, coating or printing said solvent onto said first electrical insulator, and heating said solvent to vaporize said solvent.
6. The thin-film device as set forth in claim 1 , wherein said first electrical insulator, said oxide-semiconductor film, and said second electrical insulator are formed on an electrically insulating substrate.
7. The thin-film device as set forth in claim 6 , wherein said electrically insulating substrate is comprised of one of a glass substrate and a resin substrate.
8. The thin-film device as set forth in claim 1 , wherein said thin-film device is comprised of one of a thin-film transistor and a thin-film diode.