Termination design for deep source electrode MOSFET

1. A power semiconductor device comprising:

an active region, said active region including a plurality of source trenches extending into a semiconductor body of one conductivity, a source contact, and a source electrode insulated from said semiconductor body by a thick insulation layer disposed inside each said source trench and electrically connected to said source contact;

a termination region adjacent said active region, said termination region including at least one termination trench which extends to the same depth as said source trenches, and a termination electrode disposed at least inside said termination trench; and

another termination trench that extends to the same depth as said source trenches, wherein said termination electrode is disposed inside said another termination trench.

2. The device of claim 1 , wherein said termination electrode includes a field plate extending away from said active region and disposed on a field insulation body over said semiconductor body.

3. The device of claim 1 , wherein said termination region further includes an EQR trench that is the same depth as said source trenches, and an EQR electrode insulated from said semiconductor body disposed within said EQR trench.

4. The device of claim 3 , wherein said EQR trench is the same width as said source trenches.

5. The device of claim 1 , wherein said active region further includes

a channel region of another conductivity, a first gate insulation adjacent a sidewall of one of said source trenches; a first gate electrode adjacent said first gate insulation and spanning said channel region adjacent said sidewall; a second gate insulation adjacent an opposing sidewall of said one of said source trenches; and a second gate electrode adjacent said second gate insulation and spanning said channel region adjacent said opposing sidewall, wherein a source electrode inside said one of said source trenches is adjacent but insulated from said first and second gate electrodes and extends to a depth below said gate electrodes.

6. The device of claim 5 , wherein said gate insulations are thinner than said thick insulation layer inside said one of said source trenches.