Semiconductor device
According to the present invention, there is provided a semiconductor device having a gate field plate structure, which includes a semiconductor substrate; a gate insulation film formed on the semiconductor substrate; a protective insulation film formed on the semiconductor substrate; a gate electrode formed on the gate insulation film; and a field plate electrode of the same electric potential as that of the gate electrode, formed on the protective insulation film. The protective insulation film is formed on the surface of the semiconductor substrate, and is not formed inside the substrate.
1 . A semiconductor device with a gate field plate structure, comprising:
a semiconductor substrate;
a gate insulation film formed on siad semiconductor substrate;
a protective insulation film formed on said semiconductor substrate;
a gate electrode formed on said gate insulation film; and
a field plate electrode of the same electric potential as that of said gate electrode, formed on said protective insulation film, wherein
said protective insulation film is formed on the surface of said semiconductor substrate, and is not formed inside the substrate.
2 . A semiconductor device according to claim 1 , wherein
said gate electrode and said field plate electrode are formed in an integrated manner.
3 . A semiconductor device according to claim 1 , wherein
said protective insulation film is formed by high-density plasma CVD method.
4 . A semiconductor device according to claim 2 , wherein
said protective insulation film is formed by high-density plasma CVD method.
5 . A semiconductor device according to claim 1 , wherein
said protective insulation film is formed by isotropic wet etching method.
6 . A semiconductor device according to claim 2 , wherein
said protective insulation film is formed by isotropic wet etching method.
7 . A semiconductor device with a gate field plate structure, formed in a region isolated by an isolation region using the LOCOS method, comprising:
a semiconductor substrate;
a gate insulation film formed on said semiconductor substrate;
a protective insulation film formed on said semiconductor substrate using the LOCOS method;
a gate electrode formed on said gate insulation film; and
a field plate electrode of the same electric potential as that of said gate electrode, formed on said protective insulation film, wherein
said protective insulation film is formed thinner than said isolation region.
8 . A semiconductor device according to claim 7 , wherein
the thickness of said protective insulation film is half or below the thickness of said isolation region.