Encapsulated silicidation for improved SiC processing and device yield

1. A method for producing a silicide contact, comprising:

depositing a metal on a SiC substrate;

forming an encapsulating layer on the deposited metal; and

annealing said deposited metal to form a silicide contacts,

wherein the forming forms said encapsulating layer so that said encapsulating layer has direct contact to the deposited metal and has a coefficient of thermal expansion that is balanced between the coefficient of thermal expansion of said deposited metal and the coefficient of thermal expansion of the SiC substrate.

2. The method of claim 1 , wherein said SiC substrate is subjected to a cleaning process prior to the depositing step.

3. The method of claim 2 , wherein said cleaning process comprises the step of

etching said SiC substrate with hydrofluoric acid.

4. The method of claim 3 , wherein said cleaning process further comprises the steps of:

washing the etched SiC substrate with an organic solvent selected from the group consisting of methanol, ethanol, propanol, isopropanol, and acetone; and

drying the SiC substrate.

5. The method of claim 4 , wherein said organic solvent is isopropanol.

6. The method of claim 1 , wherein said metal is deposited on said SiC substrate by an evaporation or sputtering deposition process.

7. The method of claim 6 , wherein said metal is deposited on said SiC substrate by electron beam evaporation.

8. The method of claim 1 , wherein said encapsulating layer comprises a metal or an alloy.

9. The method of claim 1 , wherein said encapsulating layer is formed by an evaporation or sputtering deposition process.

10. The method of claim 1 , wherein said metal is nickel.

11. The method of claim 10 , wherein said encapsulating layer comprises titanium.

12. The method of claim 11 , wherein said encapsulating layer is formed by electron beam deposition.

13. The method of claim 12 , wherein said annealing step is performed in argon at a temperature in the range of 700-1200° C.

14. The method of claim 13 , wherein said annealing step is performed in argon at 900° C. for about 30 seconds and 980° C. for about 60 seconds.

15. The method of claim 1 , wherein said encapsulating layer has a thickness in the range of 2-250 nm.

16. The method of claim 15 , wherein said encapsulating layer has a thickness of about 20 nm.

17. A silicide contact produced by the method of claim 1 .

18. A silicide contact produced by the method of claim 1 , wherein said metal is nickel and said encapsulating layer comprises titanium.

19. An electronic device comprising a silicide contact produced by the method of claim 1 .