Method of manufacturing inductor

1. A method for manufacturing an inductor using a system-in-package (SIP), the method comprising:

forming a penetration hole in a silicon substrate, depositing a first barrier metal in an inner wall of the first penetration hole, entirely filling the first penetration hole with a first metal material, and planarizing the metal material to form a first penetration electrode;

depositing an insulating film on a first surface of the silicon substrate including the first penetration electrode, and patterning the insulating film to form an inductor hole and a second penetration hole aligned with the first penetration hole;

depositing a second barrier metal in inner walls of the inductor hole and the second penetration hole, entirely filling the inductor hole and the second penetration hole with a second metal material, and planarizing the second metal material to form an inductor and a second penetration electrode; and

depositing a protective film on the insulating film and performing a back grind process such that the first penetration electrode is exposed from a second surface of the silicon substrate, the second surface being opposed to the first surface.

2. The method according to claim 1 , wherein a depth of the first penetration hole is about 50 to 500 μm, and a width of the first penetration hole is about 1 to 10 μm.

3. The method according to claim 1 , wherein depositing a first and second barrier metal comprises depositing a metal including at least one of Ti, TiN, Ti/TiN, Ta, TaN, Ta/TaN, TaN/Ta, Co, Co compound, Ni, Ni compound, W, W compound and nitride, and depositing the first and second barrier metal with a thickness of about 20 to 1000 angstroms using any one of metal thin-film deposition methods including a physical vapor deposition (PVD) method, a sputtering method, an evaporation method, a laser ablation method, an atomic layer deposition (ALD) method, and a chemical vapor deposition (CVD) method.

4. The method according to claim 1 , wherein:

depositing a first barrier metal comprises:

burying the first metal material including at least one of Al, Al compound, Cu, Cu compound, W or W compound in the first penetration hole with a thickness of about 50 to 900 μm based on a flat plate using any one of metal thin-film deposition methods including a PVD method, a sputtering method, an evaporation method, a laser ablation method, an electro copper plating (ECP) method, an ALD method, and a CVD method; and

planarizing the first metal material comprises using a chemical mechanical polishing (CMP) method or an etch-back method to form the first penetration electrode.

5. The method according to claim 1 , wherein the insulating film comprises one of SiO 2 , BPSG, TEOS, SiN, and Low-k, and is formed with a thickness of about 1 to 10 μm using an electric furnace and any one of metal thin-film deposition methods using a CVD apparatus or a PVD apparatus.

6. The method according to claim 1 , wherein:

depositing a second barrier metal comprises:

burying the second metal material including one of Al, Al compound, Cu, Cu compound, W or W compound in the inductor hole and the second penetration hole with a thickness of about 2 to 20 μm based on a flat plate using any one of metal thin-film deposition methods including a PVD method, a sputtering method, an evaporation method, a laser ablation method, an ECP method, an ALD method, and a CVD method; and

planarizing the metal material using a CMP method or an etch-back method to form the inductor and the second penetration electrode.