Rapid thermal processing apparatus and method of manufacture of semiconductor device
View Patent ↗A rapid thermal processing apparatus comprises a processing chamber which subjects a semiconductor substrate to rapid thermal processing. A substrate support part is arranged in the processing chamber and supports the substrate. A lamp part optically irradiates the substrate supported by the substrate support part and heats the substrate. A thermo sensor is provided to measure a temperature of the substrate. A temperature computing part computes the temperature of the substrate based on an output signal of the thermo sensor. A control part controls an irradiation intensity of the lamp part according to the temperature computed by the temperature computing part. In this apparatus, the control part is provided to correct a control parameter of the irradiation intensity of the lamp part based on a measured reflectivity of a surface of the substrate.
1. A rapid thermal processing apparatus comprising:
a processing chamber subjecting a semiconductor substrate to rapid thermal processing;
a substrate support part arranged in the processing chamber and supporting the substrate;
a first lamp part optically irradiating and heating a front surface of the substrate supported by the substrate support part;
a first radiation light sensor arranged on a back surface side of the substrate and receiving a radiation light from the substrate;
a temperature computing part computing a temperature of the substrate based on an output signal of the first radiation light sensor; and
a control part controlling an irradiation intensity of the first lamp part according to the temperature of the substrate computed by the temperature computing part,
wherein the rapid thermal processing apparatus further comprises a second lamp part optically irradiating and heating the substrate support part, and a second radiation light sensor arranged on a back surface side of the substrate support part and receiving a radiation light from the substrate support part, and
wherein the temperature computing part computes a temperature of the substrate support part based on an output signal of the second radiation light sensor, and the control part controls the irradiation intensity of the first lamp part based on the calculated temperature of the substrate, and controls an irradiation intensity of the second lamp part based on the calculated temperature of the substrate support part.
2. The rapid thermal processing apparatus according to claim 1 wherein the first lamp part optically irradiates both the substrate and the substrate support part, and the second lamp part optically irradiates only the substrate support part.
3. The rapid thermal processing apparatus according to claim 2 wherein the control part controls the irradiation intensity of the second lamp part based on both the output signal of the first radiation light sensor and the output signal of the second radiation light sensor.
4. The rapid thermal processing apparatus according to claim 2 wherein the control part controls the irradiation intensity of the first lamp part based on both the output signal of the first radiation light sensor and the output signal of the second radiation light sensor.
5. The rapid thermal processing apparatus according to claim 2 wherein the control part controls the irradiation intensity of the first lamp part and the irradiation intensity of the second lamp part based on both the output signal of the first radiation light sensor and the output signal of the second radiation light sensor.
6. The rapid thermal processing apparatus according to claim 3 wherein the first lamp part comprises a plurality of heating lamps each optically irradiating and heating the substrate, and the second lamp part comprises a plurality of heating lamps each optically irradiating and heating the substrate support part.
7. The rapid thermal processing apparatus according to claim 1 wherein the control part controls the irradiation intensity of the first lamp part in response to a difference between the calculated temperature of the substrate and a predetermined setting temperature, and controls the irradiation intensity of the second lamp part in response to a difference between the calculated temperature of the substrate support part and the predetermined setting temperature.