Magnetic head of magnetoresistance effect type with high resistance to external stress
View Patent ↗A tunnel magnetoresistance effect magnetic head having between magnetic shield layers, an antiferromagnetic layer, a pinned layer which has the direction of magnetization pinned by exchange coupling with the antiferromagnetic layer, an insulating layer, and a free layer whose direction of magnetization rotates relatively to external magnetic fields, wherein the antiferromagnetic layer is of an antiferromagnetic substance composed mainly of IrMn, the pinned layer is made up of a first pinned layer of CoFe alloy in contact with the antiferromagnetic layer and a second pinned layer of CoFeB alloy which is antiferromagnetically coupled with the first pinned layer, and the first and second pinned layers have the amount of magnetization such that the difference M1−M2 is in the range of 0<M2−M1<0.5 (nm·T) and also have the magnetostriction constants such that the difference |λ1−λ2| is no larger than 5.0×10 −6 .
1. A magnetic head of tunnel magnetoresistance effect type which has between lower and upper magnetic shield layers (both functioning as electrode layers), an antiferromagnetic layer, a pinned layer which has the direction of magnetization pinned by exchange coupling with said antiferromagnetic layer, an insulating layer, and a free layer whose direction of magnetization rotates relatively to external magnetic fields,
wherein said antiferromagnetic layer is of an antiferromagnetic substance composed mainly of IrMn, said pinned layer is made up of a first pinned layer of CoFe alloy which is in contact with said antiferromagnetic layer and a second pinned layer of CoFeB alloy which is antiferromagnetically coupled with said first pinned layer, and said first and second pinned layers have the amount of magnetization (represented by M1 and M2, respectively) such that the difference M1−M2 is in the range of 0≦M2−M1≦0.5 (nm·T) and also have the magnetostriction constants (represented by λ1 and λ2, respectively) such that the difference |λ1−λ2| is no larger than 5.0×10 −6 .
2. The magnetic head of tunnel magnetoresistance effect type as defined in claim 1 , wherein the first pinned layer is of Co 100-x Fe x alloy (where 20≦x≦30 at %) and the second pinned layer is of CoFeB alloy containing 15 to 30 at % of B.
3. The magnetic head of tunnel magnetoresistance effect type as defined in claim 1 , wherein the first pinned layer is made up of layer A of Co 100-x Fe x alloy (where 20≦x≦30 at %) which is in contact with the antiferromagnetic layer and layer B of Co 100-x Fe x alloy (where 0≦x≦10 at %) which is in contact with an antiferromagnetically coupled layer.
4. The magnetic head of tunnel magnetoresistance effect type as defined in claim 1 , wherein the first and second pinned layers are antiferromagnetically coupled with each other through an antiferromagnetically coupled layer of Ru.
5. The magnetic head of tunnel magnetoresistance effect type as defined in claim 1 , wherein the antiferromagnetic layer is of IrMnCr.