IP Library Granted Patent US 7,595,214
Granted Patent B2
US 7,595,214 · App. 11/903,873 · Granted Sep 29, 2009

Solid-state image pickup device and manufacturing method for the same

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Quick Facts
Patent No.
US 7,595,214
App. No.
11/903,873
Granted
Sep 29, 2009
Kind
B2
Abstract

A solid-state image pickup device includes, in a substrate, a plurality of photoelectric conversion regions for subjecting incoming light to photoelectric conversion, a reading gate for reading a signal charge from the photoelectric conversion regions, and a transfer register (vertical register) for transferring the signal charge read by the reading gate. Therein, a groove is formed on the surface side of the substrate, and the transfer register and the reading gate are formed at the bottom part of the groove. With such a structure, in the solid-state image pickup device, reduction can be achieved for the smear characteristics, a reading voltage, noise, and others.

Claims (8)

1. A method for manufacturing a solid-state image pickup device that includes: in a substrate, a plurality of a pixel separation regions for partitioning a plurality of pixel regions; a plurality of photoelectric conversion regions for subjecting incoming light to photoelectric conversion; an electrode for reading a signal charge from the photoelectric conversion regions; the method comprising the steps of, after a groove is formed on the substrate:

forming the pixel separation regions, and the electrode at a bottom part of the groove.

2. The method for manufacturing the solid-state image pickup device according to claim 1 , further comprising the step of, after the electrode is formed, forming a light-shielding film to fill a gap between the electrode and a sidewall section of the groove via an inter-layer insulation film.

3. The method for manufacturing the solid-state image pickup device according to claim 1 , wherein the groove has a lattice structure.

4. The method for manufacturing the solid-state image pickup device according to claim 1 , wherein the groove is plurally segmented.

5. The method manufacturing for the solid-state image pickup device according to claim 1 , wherein the groove is formed by directly etching the substrate.

6. The method for manufacturing the solid-state image pickup device according to claim 1 , wherein

after the substrate is subjected to local oxidation to form a local oxidation film, the groove is formed by removing the local oxidation film.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 19, 2016
From: SONY CORPORATION
To: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
Reel/Frame 040419/0001 →