Semiconductor device manufacturing method and semiconductor device using the same
View Patent ↗Including a process for forming a fin 12 a having a first height and a fin 12 b having a second height lower than the first height, a process for forming a silicon oxide film on the upper and side faces of each of the fins 12 a and 12 b , a process for forming a conductive poly silicon film on the silicon oxide film, a process for forming a gate insulating film 15 and a gate electrode 16 on from the upper face to the side face of each of the fins 12 a and 12 b by patterning the silicon oxide film and the poly silicon film, and a process for forming a couple of diffusion regions 14 in two regions clipping a region underneath the gate electrode of each of the fins 12 a and 12 b. According to the present invention, a semiconductor device manufacturing method and a semiconductor device including a fin-type FET having capability of changing the design of the gate width corresponding to an application can be realized.
1. A semiconductor device manufacturing method, comprising;
forming, from a semiconductor substrate, a first projecting region having a first height and a second projecting region having a second height lower than said first height, said first projecting region being separated from said second projecting region by a space;
forming a first insulating film on the upper and side faces of each of said first and second projecting regions;
forming a conductive film on said first insulating film;
forming a gate insulating film and a gate electrode on the upper face and the side faces of each of said first and second projecting regions by patterning said first insulating film and said conductive film, the gate electrode extending continuously, from one of the side faces of said first projecting region, to the upper face of said first projecting region, to the other side face of said first projecting region, across the space separating the first projecting region from said second projecting region, to one of the side faces of said second projecting region, to the upper face of said second projecting region, and to the other side face of said second projecting region, respectively; and
forming a couple of diffusion regions in two regions straddling a region underneath said gate electrode of each of said first and second projecting regions.
2. The semiconductor device manufacturing method according to claim 1 , wherein said forming said first and second projecting regions includes:
forming said first projecting region having said first height and a third projecting region by engraving an upper face of said semiconductor substrate using etching, and processing said third projecting region to be said second projecting region having said second height by etching said third projecting region from its upper face.
3. The semiconductor device manufacturing method according to claim 1 , wherein said forming said first and second projecting regions includes:
forming said second projecting region and a third projecting region by engraving an upper face of said semiconductor substrate using etching,
forming a second insulating film on the upper face of said semiconductor substrate, said second insulating film having a thickness from an upper face of said third projecting region that is larger than a differential between said first height and said second height,
forming an opening in said second insulating film to expose the upper face of said third projecting region from said second insulating film,
forming said first projecting region by forming a first semiconductor film having the same thickness as said differential between said first height and said second height in said opening, and
removing said second insulating film.
4. The semiconductor device manufacturing method according to claim 3 , wherein said forming said first semiconductor film in said opening includes epitaxial growing said first semiconductor film using said third projecting region being exposed from the bottom of said opening as a seed.
5. The semiconductor device manufacturing method according to claim 3 , wherein said forming said first semiconductor film in said opening includes depositing a semiconductor substance on said second insulating film and in said opening, and removing said first semiconductor film formed on said second insulating film.
6. The semiconductor device manufacturing method according to claim 1 , wherein said semiconductor substrate is a bulk substrate.
7. The semiconductor device manufacturing method according to claim 1 , wherein said semiconductor substrate is an SOI substrate including a support substrate, a oxide film on said support substrate, and a second semiconductor film on said oxide film, and at least a part of said first projecting region and said second projecting region is formed by engraving said second semiconductor film.
8. The semiconductor device manufacturing method according to claim 1 , wherein the first insulating film is a silicon oxide film.
9. The semiconductor device manufacturing method according to claim 1 , wherein the conductive film is a conductive polysilicon film.
10. The semiconductor device manufacturing method according to claim 1 , wherein the gate electrode does not cover said diffusion regions.
11. The semiconductor device manufacturing method according to claim 1 , wherein the diffusion regions of each projecting region are disposed on opposite first and second side faces of the respective projecting regions, and the gate electrode is disposed on respective third and fourth side faces of the respective projecting regions, the first and second side faces facing in a direction perpendicular to a direction in which the third and fourth side faces face.