Liquid crystal display device and fabricating method thereof
View Patent ↗A method for fabricating a liquid crystal display (LCD) device comprises forming an active pattern and a data line on a substrate, the active pattern including a source, a drain, and a channel regions; a first insulation film on a portion of the substrate; forming a gate electrode in a portion of the active pattern where the first insulation film is formed; a second insulation film on the substrate; forming a plurality of first contact holes exposing a portion of the source and drain regions and a second contact hole exposing a portion of the data line; forming a source electrode from a transparent conductive material connected to a source region within the respective first contact hole and a data line within the second contact hole; and forming a pixel and a drain electrodes from the transparent conductive material connected to a drain region within the respective first contact hole.
1. A method for fabricating an liquid crystal display (LCD) device, comprising:
disposing a silicon layer on a substrate;
disposing a conductive metal layer on the silicon layer;
patterning the conductive metal layer and the silicon layer to form an active pattern and a data line; the active pattern includes a source region, a drain region and a channel region;
disposing a first insulation film on a portion of the substrate;
removing the first insulation film and the conductive metal layer disposed in a portion of the active pattern;
disposing a second insulation film on the substrate;
forming a gate electrode on a portion of the active pattern where the second insulation film has been disposed;
disposing a third insulation film on a portion of the substrate;
forming a plurality of first contact holes defined through the second and third insulation films to expose a portion of the source and drain regions;
forming a second contact hole defined through the first, second, and third insulation films to expose a portion of the data line;
forming a source electrode connected to the source region within one of the plurality of the first contact holes and a data line within the second contact hole; and
forming a pixel electrode and a drain electrode connected to the drain region within the other one of the plurality of first contact holes.
2. The method according to claim 1 , wherein the first insulation film disposed on a portion of the active pattern and the conductive metal layer are removed by a mask having a size as large as or greater than the active pattern.
3. The method according to claim 1 , where the silicon layer is formed of a crystallized silicon thin film.
4. The method according the claim 1 , further comprising, forming a gate electrode on the active pattern, and thereafter forming a source region and a drain region by injecting an impurity ion to a certain portion of the active pattern using the gate electrode as a mask.
5. The method according to claim 4 , where the impurity ion is a group V element.
6. The method according to claim 5 , wherein the group V element is phosphorus.
7. The method according to claim 4 , wherein the impurity ion is a group III element.
8. The method according to claim 7 , wherein the group III element is boron.
9. The method according to claim 1 , wherein the source and drain electrode are formed with a transparent conductive material.
10. The method according to claim 1 , wherein a portion of the drain electrode is extended into a pixel region to form the pixel electrode.