Method for preparing single walled carbon nanotubes from a metal layer
View Patent ↗Methods of preparing single walled carbon nanotubes are provided. An arrangement comprising one or more layers of fullerene in contact with one side of a metal layer and a solid carbon source in contact with the other side of metal layer is prepared. The fullerene/metal layer/solid carbon source arrangement is then heated to a temperature below where the fullerenes sublime. Single walled carbon nanotubes are grown on the fullerene side of the metal layer.
1. A method for producing a multiplicity of single walled carbon nanotubes with a narrow diameter distribution from a source of carbon, said method comprising:
(a) preparing an arrangement comprising
a metal layer,
at least one layer of fullerenes in contact with one side of said metal layer, and
a solid carbon source in contact with the other side of said metal layer;
(b) heating said arrangement to a temperature below where said fullerenes sublime;
(c) permitting said at least one layer of fullerenes and said carbon source to dissolve into the metal layer; and
(d) growing a multiplicity of single walled carbon nanotubes of a single diameter d, wherein d is within the range of 0.8 to 2.2 nm, at least 80% of said multiplicity of single wall carbon nanotubes having a diameter within ±5% of d.
2. The method of claim 1 , wherein the arrangement comprises a number of layers of fullerenes that substantially saturate the metal layer.
3. The method of claim 1 , wherein the diameter d is within the range of 1.0 to 1.8 nm.
4. The method of claim 1 , wherein the diameter d is within the range of 1.2 to 1.6 nm.
5. The method of claim 1 , wherein after growth is initiated the source of carbon comprises a gaseous carbon source.
6. The method of claim 5 , wherein the source of carbon comprises CO, alcohol, or a hydrocarbon.
7. The method of claim 1 , wherein the metal layer comprises a metal selected from the group consisting of Fe, Co, Mn, Ni, Cu and Mo.
8. The method of claim 7 , wherein the metal layer comprises an alloy or other mixtures of Fe, Co, Mn, Ni, Cu and Mo.
9. The method of claim 1 , wherein the metal layer is of a thickness between about 1 nm to 20 nm.
10. The method of claim 1 , wherein the metal layer is of a thickness between about 2 nm to 10 nm.
11. The method of claim 1 , wherein the metal layer is of a thickness between about 3 nm to 5 nm.
12. The method of claim 1 , wherein said temperature is between about 500° C. and 700° C.
13. The method of claim 1 , wherein said temperature is below the temperature at which the fullerenes sublime as determined by TGA.
14. The method of claim 1 , further comprising the step of increasing the temperature above the sublimation temperature of said fullerenes after growth is initiated.
15. The method of claim 14 , further comprising the step of increasing the temperature to between 700° C. and 1100° C.
16. The method of claim 1 , wherein said solid carbon source comprises carbon fibers.
17. The method of claim 1 , wherein said solid carbon source comprises carbon selected from the group consisting of glassy carbon, carbon pitches, cross-linked carbon resins and crystals of polyparaphenylene.
18. The method of claim 1 , wherein vapor pressure of the fullerenes is less than 760 mm of Hg.
19. The method of claim 1 , wherein vapor pressure of the fullerenes is less than 730 mm of Hg.
20. A method for producing a multiplicity of single walled carbon nanotubes with a narrow diameter distribution from a source of carbon, said method comprising:
(a) preparing an arrangement comprising
a metal layer,
at least one layer of fullerenes in contact with one side of said metal layer, and
a solid carbon source in contact with the other side of said metal layer;
(b) heating said arrangement to a temperature below where said fullerenes sublime;
(c) permitting said at least one layer of fullerenes and said carbon source to dissolve into the metal layer; and
(d) growing a multiplicity of single walled carbon nanotubes having a single raman peak in the RBM region.
21. The method of claim 20 , wherein the arrangement comprises a number of layers of fullerenes that substantially saturate the metal layer.
22. The method of claim 20 , wherein after growth is initiated the source of carbon comprises a gaseous carbon source.
23. The method of claim 22 , wherein the source of carbon comprises CO, alcohol, or a hydrocarbon.
24. The method of claim 20 , wherein the metal layer comprises a metal selected from the group consisting of Fe, Co, Mn, Ni, Cu and Mo.
25. The method of claim 24 , wherein the metal layer comprises an alloy or other mixtures of Fe, Co, Mn, Ni, Cu and Mo.
26. The method of claim 20 , wherein the metal layer is of a thickness between about 1 nm to 20 nm.
27. The method of claim 20 , wherein the metal layer is of a thickness between about 2 nm to 10 nm.
28. The method of claim 20 , wherein the metal layer is of a thickness between about 3 nm to 5 nm.
29. The method of claim 20 , wherein said temperature is between about 500° C. and 700° C.
30. The method of claim 20 , wherein said temperature is below the temperature at which the fullerenes sublime as determined by TGA.
31. The method of claim 20 , further comprising the step of increasing the temperature above the sublimation temperature of said fullerenes after growth is initiated.
32. The method of claim 31 , further comprising the step of increasing the temperature to between 700° C. and 1100° C.
33. The method of claim 20 , wherein said solid carbon source comprises carbon fibers.
34. The method of claim 20 , wherein said solid carbon comprises carbon selected from the group consisting of glassy carbon, carbon pitches, cross-linked carbon resins and crystals of polyparaphenylene.
35. The method of claim 20 , wherein vapor pressure of the fullerenes is less than 760 mm of Hg.
36. The method of claim 23 , wherein vapor pressure of the fullerenes is less than 730 mm of Hg.
37. A method for producing a multiplicity of single walled carbon nanotubes with a narrow diameter distribution from a source of carbon, said method comprising:
(a) heating an arrangement to a temperature below where said fullerenes sublime, said arrangement comprising
a metal layer,
at least one layer of fullerenes in contact with one side of said metal layer, and
a solid carbon source in contact with the other side of said metal layer,
(b) permitting said at least one layer of fullerenes and said carbon source to dissolve into the metal layer; and
(c) growing a multiplicity of single walled carbon nanotubes of a single diameter d, wherein d is within the range of 0.8 to 2.2 nm, at least 80% of said multiplicity of single walled carbon nanotubes having the diameter d within the range d ±5% of d.