Semiconductor wafer with low-K dielectric layer and process for fabrication thereof
View Patent ↗To improve the mechanical strength of a wafer comprising a low-k dielectric layer, the low-k dielectric layer is formed so as to have certain regions of low dielectric constant and the remainder having a higher mechanical strength. The higher-strength regions may have a relatively-higher value of dielectric constant. Selective ultraviolet curing of a dielectric material can be performed so as to expel a porogen from the region(s) desired to have low dielectric constant. A photomask, hardmask, or opaque resist, patterned so as to define the region(s) to have lower dielectric constant, is used to shield the remainder of the dielectric material from the ultraviolet radiation. Alternatively, a layer of dielectric material can be blanket cured to lower its dielectric constant, then non-critical regions thereof can be selectively over-cured whereby to produce regions of increased mechanical strength.
1. A method of fabricating an integrated circuit device on a semiconductor wafer, comprising:
forming on the wafer a dielectric layer having a first value of dielectric constant;
forming a metal line in a trench region formed within the dielectric layer;
capping the metal line;
producing first and second regions in said dielectric layer after capping the metal line by masking an area of the dielectric layer corresponding to said first region with a hard mask pattern and applying radiation to said area of the dielectric layer corresponding to said second region, to cause the dielectric constant of the dielectric material layer to reduce, wherein the hard mask pattern is substantially opaque to the radiation; and
wherein the first region retaining said first value of dielectric constant, the second region including the trench region and having a second value of dielectric constant, said second value being lower than said first value and lower than 3.0, wherein the mechanical strength of said first region is greater than the mechanical strength of the second region, and wherein said producing comprises treating an area of the dielectric layer corresponding to said second region to lower the dielectric constant thereof to said second value.
2. The integrated circuit device fabrication method of claim 1 , wherein forming the dielectric layer comprises forming a dielectric layer comprising pores containing a porogen, and the treating comprises expelling porogen from the pores in said second region.
3. The integrated circuit device fabrication method of claim 1 , wherein applying radiation comprises:
applying ultraviolet radiation to said area of the dielectric layer corresponding to said second region.
4. The integrated circuit device fabrication method of claim 1 , wherein applying radiation comprises:
applying an electron beam to said area of the dielectric layer corresponding to said second region.
5. The integrated circuit device fabrication method of claim 1 , wherein each second region is defined at a location on the wafer which is not to be overlaid by a bond pad.
6. The integrated circuit device fabrication method of claim 1 , and comprising forming a passivation layer on the dielectric layer, said passivation-layer formation being performed before said masking.
7. The integrated circuit device fabrication method of claim 1 , and comprising heating the wafer during applying radiation.
8. A method of fabricating an integrated circuit device on a semiconductor wafer, comprising:
forming on the wafer a dielectric layer having a first value of dielectric constant;
forming a metal line in a trench region formed within the dielectric layer;
capping the metal line;
producing first and second regions in said dielectric layer after capping the metal line by masking an area of the dielectric layer corresponding to said first region with a resist patterned to shield said area of the dielectric layer corresponding to said first region of the dielectric layer from applied radiation, said resist being substantially opaque to said applied radiation, and applying radiation to said area of the dielectric layer corresponding to said second region, to cause the dielectric constant of the dielectric material layer to reduce, and
wherein the first region retaining said first value of dielectric constant, the second region including the trench region and having a second value of dielectric constant, said second value being lower than said first value and lower than 3.0, wherein the mechanical strength of said first region is greater than the mechanical strength of the second region; wherein said producing comprises treating an area of the dielectric layer corresponding to said second region to lower the dielectric constant thereof to said second value.