Electrical device fabrication from nanotube formations
View Patent ↗A method for forming nanotube electrical devices, arrays of nanotube electrical devices, and device structures and arrays of device structures formed by the methods. Various methods of the present invention allow creation of semiconducting and/or conducting devices from readily grown SWNT carpets rather than requiring the preparation of a patterned growth channel and takes advantage of the self-controlling nature of these carpet heights to ensure a known and controlled channel length for reliable electronic properties as compared to the prior methods.
1. A method for fabricating an electrical device, said method comprising:
growing a vertically aligned nanotube carpet on a first substrate;
transferring the nanotube carpet onto a second substrate;
insulating the nanotube carpet; and
applying a conductive layer around the insulated nanotube carpet.
2. The method of claim 1 , wherein transferring the nanotube carpet comprises flip-over or flipping of the carpet.
3. The method of claim 1 , wherein the carpet comprises transferring isolated pillars of the carpet.
4. The method of claim 1 , further comprising: modifying the electrical properties of the carpet.
5. The method of claim 4 , wherein modifying comprises removing conductive nanotubes from the carpet.
6. The method of claim 2 , further comprising: applying an electrical contact to a surface of the flipped over carpet to form an electrical circuit.
7. The method of claim 1 , wherein at least a portion of the electrical device is capable of being electrically connected into a circuit.
8. The method of claim 7 , further comprising flipping the carpet.
9. The method of claim 1 , wherein growing the carpet further comprises patterning the carpet.
10. The method of claim 1 , wherein at least a portion of the carpet comprises conductive nanotubes.
11. The method of claim 1 , further comprising: applying a conductive substrate to the carpet at the free end of the carpet.
12. The method of claim 1 , wherein the electrical device is selected from the group consisting of transistors, capacitors, supercapacitors, batteries, and memory devices.