Semiconductive Composition and Power Cable Using the Same
The present invention relates to a semiconductive composition and a power cable using the same. The semiconductive composition according to the present invention constituting a semi-conductive layer of a power cable includes 100 parts by weight of a base resin composed of an ethylene-based copolymer resin; 45 to 70 parts by weight of a carbon black; and 0.2 to 5.0 parts by weight of a nonionic surfactant. The semiconductive composition according to the present invention has an improved interfacial smoothness in the semiconductive layer and the insulation layer of the power cable and an increased dielectric breakdown strength of the insulation layer. Also, the semiconductive composition according to the present invention may be useful to ensure an easy cleaning property of a mold upon extruding/molding a power cable.
1 . A semiconductive composition constituting a semiconductive layer of a power cable, comprising: 100 parts by weight of a base resin composed of an ethylene-based copolymer resin;
45 to 70 parts by weight of a carbon black; and 0.2 to 5.0 parts by weight of a nonionic surfactant, wherein the base resin is first polyethylene butyl acrylate having a butyl acrylate content of 10 to 20% by weight and a melt index of 1 to 8 g/10 min or first polyethylene ethyl acrylate having an ethyl acrylate content of 10 to 20% by weight and a melt index of 1 to 8 g/10 min.
2 . (canceled)
3 . The semiconductive composition according to claim 1 , wherein the base resin further includes second polyethylene butyl acrylate having a butyl acrylate content of 25 to 40% by weight and a melt index of 15 to 300 g/10 min, in addition to the first polyethylene butyl acrylate.
4 . The semiconductive composition according to claim 3 , wherein a weight ratio of the first polyethylene butyl acrylate and the second polyethylene butyl acrylate ranges from 85:15 to 70:30.
5 . (canceled)
6 . The semiconductive composition according to claim 1 , wherein the base resin further includes second polyethylene ethyl acrylate having an ethyl acrylate content of 25 to 40% by weight and a melt index of 15 to 300 g/10 min, in addition to the first polyethylene ethyl acrylate.
7 . The semiconductive composition according to claim 6 , wherein a weight ratio of the first polyethylene ethyl acrylate and the second polyethylene ethyl acrylate ranges from 85:15 to 75:25.
8 . The semiconductive composition according to claim 1 , wherein the carbon black is an acetylene black, or a furnace black having a sulfur content of less than 300 ppm.
9 . The semiconductive composition according to claim 1 , wherein the surfactant is selected from the group consisting of sorbitan fatty acid ester, decaglyn fatty acid ester, polyglycerine fatty acid ester, polypropyleneglycol and pentaerythritol fatty acid ester.
10 . The semiconductive composition according to claim 1 , further comprising; based on 100 parts by weight of the base resin, 0.3 to 2.0 parts by weight of an antioxidant; and 0.2 to 2 parts by weight of a cross-linking agent.
11 . A power cable having a conductive layer, an internal semiconductive layer, an insulation layer, an external semiconductive layer and a sheath layer which are sequentially formed from an inside toward an outside of the power cable, wherein the internal and/or external semiconductive layer is made of a semiconductive composition, including: 100 parts by weight of a base resin composed of an ethylene-based copolymer resin;
45 to 70 parts by weight of a carbon black; and 0.2 to 5.0 parts by weight of a nonionic surfactant, wherein the base resin is first polyethylene butyl acrylate having a butyl acrylate content of 10 to 20% by weight and a melt index of 1 to 8 g/10 min or first polyethylene ethyl acrylate having an ethyl acrylate content of 10 to 20% by weight and a melt index of 1 to 8 g/10 min.
12 . (canceled)
13 . The power cable according to claim 11 , wherein the semiconductive composition further includes second polyethylene butyl acrylate having a butyl acrylate content of 25 to 40% by weight and a melt index of 15 to 300 g/10 min, in addition to the first polyethylene butyl acrylate.
14 . (canceled)
15 . The power cable according to claim 11 , wherein the semiconductive composition further includes second polyethylene ethyl acrylate having an ethyl acrylate content of 25 to 40% by weight and a melt index of 15 to 300 g/10 min, in addition to the first polyethylene ethyl acrylate.
16 . The power cable according to claim 11 , wherein the carbon black is an acetylene black, or a furnace black having a sulfur content of less than 300 ppm.
17 . The power cable according to claim 11 , wherein the surfactant is at least one selected from the group consisting of sorbitan fatty acid ester, decaglyn fatty acid ester, polyglycerine fatty acid ester, polypropyleneglycol and pentaerythritol fatty acid ester.
18 . The power cable according to claim 11 , wherein the semiconductive composition further includes: based on 100 parts by weight of the base resin, 0.3 to 2.0 parts by weight of an antioxidant; and 0.2 to 2 parts by weight of a cross-linking agent.
19 . The power cable according to claim 13 , wherein the semiconductive composition further includes: based on 100 parts by weight of the base resin, 0.3 to 2.0 parts by weight of an antioxidant; and 0.2 to 2 parts by weight of a cross-linking agent.
20 . The power cable according to claim 15 , wherein the semiconductive composition further includes: based on 100 parts by weight of the base resin, 0.3 to 2.0 parts by weight of an antioxidant; and 0.2 to 2 parts by weight of a cross-linking agent.
21 . The power cable according to claim 16 , wherein the semiconductive composition further includes: based on 100 parts by weight of the base resin, 0.3 to 2.0 parts by weight of an antioxidant; and 0.2 to 2 parts by weight of a cross-linking agent.
22 . The power cable according to claim 17 , wherein the semiconductive composition further includes: based on 100 parts by weight of the base resin, 0.3 to 2.0 parts by weight of an antioxidant; and 0.2 to 2 parts by weight of a cross-linking agent.
23 . The semiconductive composition according to claim 3 , further comprising; based on 100 parts by weight of the base resin, 0.3 to 2.0 parts by weight of an antioxidant; and 0.2 to 2 parts by weight of a cross-linking agent.
24 . The semiconductive composition according to claim 4 , further comprising; based on 100 parts by weight of the base resin, 0.3 to 2.0 parts by weight of an antioxidant; and 0.2 to 2 parts by weight of a cross-linking agent.
25 . The semiconductive composition according to claim 6 , further comprising; based on 100 parts by weight of the base resin, 0.3 to 2.0 parts by weight of an antioxidant; and 0.2 to 2 parts by weight of a cross-linking agent.
26 . The semiconductive composition according to claim 7 , further comprising; based on 100 parts by weight of the base resin, 0.3 to 2.0 parts by weight of an antioxidant; and 0.2 to 2 parts by weight of a cross-linking agent.
27 . The semiconductive composition according to claim 8 , further comprising; based on 100 parts by weight of the base resin, 0.3 to 2.0 parts by weight of an antioxidant; and 0.2 to 2 parts by weight of a cross-linking agent.
28 . The semiconductive composition according to claim 9 , further comprising; based on 100 parts by weight of the base resin, 0.3 to 2.0 parts by weight of an antioxidant; and 0.2 to 2 parts by weight of a cross-linking agent.