Heterocontact Solar Cell with Inverted Geometry of its Layer Structure
A heterocontact solar cell in a layer structure. The solar cell includes an absorber made of a p-type and/or n-type doped crystalline semiconductor material. The cell also includes an emitter made of an amorphous semiconductor material that is oppositely doped relative to the absorber. Also included is an intrinsic interlayer made of an amorphous semiconductor material between the absorber and the emitter. The cell includes a cover layer on the side of the absorber facing a light. A first ohmic contact structure including a minimized shading surface on the side of the absorber facing the light and a second ohmic contact structure on a side of the absorber facing away from the light are also included. The layer structure has an inverted geometry such that the emitter is on a side of the absorber facing away from the light and the cover layer is configured as a transparent antireflective layer and as a passivation layer of the absorber, the passivation layer forms a surface field that reflects minority charge carriers, the first ohmic contact structure penetrating the transparent antireflective layer and the second ohmic contact structure configured over a surface area of the emitter.
1 to 7 . (canceled)
8 . A heterocontact solar cell in a layer structure, comprising:
an absorber made of at least one of a p-type and n-type doped crystalline semiconductor material;
an emitter made of an amorphous semiconductor material that is oppositely doped relative to the absorber;
an intrinsic interlayer made of an amorphous semiconductor material between the absorber and the emitter;
a cover layer on a side of the absorber facing a light;
a first ohmic contact structure including a minimized shading surface on the side of the absorber facing the light; and
a second ohmic contact structure on a side of the absorber facing away from the light,
wherein the layer structure has an inverted geometry such that the emitter is on a side of the absorber facing away from tile light and the cover layer is configured as a transparent antireflective layer and as a passivation layer of the absorber, the passivation layer forming a surface field that reflects minority charge carriers, the first ohmic contact structure penetrating the transparent antireflective layer and the second ohmic contact structure configured over a surface area of the emitter.
9 . The solar cell according to claim 8 , wherein regions that reflect charge carriers are formed in the absorber underneath the first ohmic contact structure.
10 . The solar cell according to claim 8 , wherein the absorber is made of n-type doped crystalline silicons the emitter is made of p-type doped amorphous silicon and the intrinsic interlayer is made of undoped amorphous silicon.
11 . The solar cell according to claim 9 , wherein the absorber is made of n-type doped crystalline silicon, the emitter is made of p-type doped amorphous silicon and the intrinsic interlayer is made of undoped amorphous silicon.
12 . The solar cell according to claim 8 , wherein the transparent antireflective layer is made of silicon nitrite.
13 . The solar cell according: to claim 9 , wherein the transparent antireflective layer is made of silicon nitrite.
14 . The solar cell according to claim 10 , wherein the transparent antireflective layer is made of silicon nitrite.
15 . The solar cell according to claim 8 , wherein the first ohmic con-tact structure is configured as at least one of a contact finger and a contact grid made of silver, and the second ohmic contact structure is configured as a thin, flat metal layer made of gold.
16 . The solar cell according to claim 9 , wherein the first ohmic contact structure is configured as at least one of a contact finger and a contact grid made of silver, and the second ohmic contact structure is configured as a thin, flat metal layer made of gold.
17 . The solar cell according to claim 10 , wherein the first ohmic contact structure is configured as at least one of a contact finger and a contact grid made of silver, and the second ohmic contact structure is configured as a tin flat metal layer made of gold.
18 . The solar cell according to claim 12 , wherein the first ohmic contact structure is configured as at least one of a contact finger and a contact grid made of silver, and the second ohmic contact structure is configured as a thin, flat metal layer made of gold.
19 . The solar cell according to claim 8 , wherein the absorber includes a self-supporting wafer.
20 . The solar cell according to claim 9 , wherein the absorber includes a self-supporting wafer.
21 . The solar cell according to claim 10 , wherein the absorber includes a self-supporting wafer.
22 . The solar cell according to claim 12 , wherein the absorber includes a self-supporting wafer.
23 . The solar cell according to claim 15 , wherein the absorber includes a self-supporting wafer.
24 . The solar cell according to claim 8 , wherein the layers of the solar cell have a thin-layer structuring and further comprising a load-bearing glass substrate, the load-bearing glass substrate being on the side of the absorber facing away from the light.
25 . The solar cell according to claim 9 , wherein the layers of the solar cell have a thin-layer structuring and further comprising a load-bearing glass substrate, the load-bearing glass substrate being on the side of the absorber facing away from the light.
26 . The solar cell according to claim 10 , wherein the layers of the solar cell have a thin-layer structuring and further comprising a load-bearing glass substrate, the load-bearing glass substrate being on the side of the absorber facing away from the light.
27 . The solar cell according to claim 12 , wherein the layers of the solar cell have a thin-layer structuring and further comprising a load-bearing glass substrate, the load-bearing glass substrate being on the side of the absorber facing away from the light.