IP Library Granted Patent US 8,124,240
Granted Patent B2
US 8,124,240 · App. 11/917,633 · Granted Feb 28, 2012

Protective film structure of metal member, metal component employing protective film structure, and equipment for producing semiconductor or flat-plate display employing protective film structure

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Quick Facts
Patent No.
US 8,124,240
App. No.
11/917,633
Granted
Feb 28, 2012
Kind
B2
Abstract

A protective film structure of a metal member for use in an apparatus for manufacturing a semiconductor or the like, the protective film structure including a first coating layer of faultless aluminum oxide formed by direct anodic oxidation of a base-material metal of an aluminum alloy; and a second coating layer formed on the first coating layer and made of yttrium oxide by a plasma spraying method.

Claims (12)

1. A protective film structure of a metal member for use in an apparatus for manufacturing a semiconductor or the like, said protective film structure comprising:

a first coating layer of faultless aluminum oxide formed by direct anodic oxidation of a base-material metal of an aluminum alloy; and

a second coating layer formed on the first coating layer and made of yttrium oxide by a plasma spraying method.

2. A protective film structure of a metal member according to claim 1 , wherein a surface of said base-material metal is blasted before forming said first coating layer.

3. A protective film structure of a metal member according to claim 1 , wherein said first coating layer is formed by anodic oxidation using an electrolyte solution in the form of an organic anodization solution of pH 4 to pH 10.

4. A protective film structure of a metal member according to claim 1 , wherein said first coating layer is formed by anodic oxidation using an electrolyte solution in the form of an inorganic anodization solution of pH 4 to pH 10.

5. A protective film structure of a metal member according to any one of claims 1 , 2 , 3 , or 4 , wherein said first coating layer has a thickness of 10 nm or more and 1 micrometer or less.

6. A protective film structure of a metal member according to claim 1 , wherein said second coating layer of yttrium oxide is about 200 micrometers.

7. A gas supply shower head for a semiconductor or flat panel display manufacturing apparatus, using the protective film structure of the metal member according to claim 1 .

8. A metal component for a semiconductor or flat panel display manufacturing apparatus, using the protective film structure of the metal member according to claim 1 .

9. A semiconductor or flat panel display manufacturing apparatus using the protective film structure of the metal member according to claim 1 .

10. A semiconductor or flat panel display manufacturing apparatus using the protective film structure of the metal member according to claim 1 for an inner wall of a process chamber.

Assignments (3)
CHANGE OF NAME Recorded Sep 5, 2017
From: MITSUBISHI RAYON CO., LTD.
To: MITSUBISHI CHEMICAL CORPORATION
Reel/Frame 043750/0834 →
MERGER Recorded Sep 4, 2017
From: MITSUBISHI CHEMICAL CORPORATION
To: MITSUBISHI RAYON CO., LTD.
Reel/Frame 043750/0207 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 14, 2016
From: NIHON CERATEC CO., LTD.
To: NGK SPARK PLUG CO., LTD.
Reel/Frame 039157/0484 →