Semiconductor laser device and method for fabricating the same
View Patent ↗In a monolithic dual wavelength laser device in which an infrared laser part 100 and a red laser part 130 are built on one n-type GaAs substrate 101 , a p-type first cladding layer 105 of the infrared laser part 100 and a p-type first cladding layer 135 of the red laser part 130 are made of the same material and have different impurity concentrations.
1. A self oscillation type semiconductor laser device comprising:
a first double hetero structure for emitting light of a first wavelength; and
a second double hetero structure for emitting light of a second wavelength different from the first wavelength, the first double hetero structure and the second double hetero structure being provided on one semiconductor substrate of a first conductivity type, wherein:
the first double hetero structure includes:
a first first-conductivity type cladding layer;
a first active layer having a plurality of well layers and formed on the first first-conductivity type cladding layer; and
a first second-conductivity type cladding layer formed on the first active layer, the second double hetero structure includes:
a second first-conductivity type cladding layer;
a second active layer having a plurality of well layers and formed on the second first-conductivity type cladding layer; and
a second second-conductivity type cladding layer formed on the second active layer,
the first second-conductivity type cladding layer and the second second-conductivity type cladding layer are made of the same material and have different impurity concentrations,
the first active layer is a quantum well active layer including GaAs,
the second active layer is a quantum well active layer including GaInP,
the total thickness of the well layers of the second active layer is larger than the total thickness of the well layers of the first active layer,
the second second-conductivity type cladding layer has a smaller thickness than the first second-conductivity type cladding layer, and
both of the first double hetero structure and the second double hetero structure cause self oscillation.
2. The self oscillation type semiconductor laser device of claim 1 ,
wherein the number of wells of the first active layer is three and the number of wells of the second active layer is five.
3. The self oscillation type semiconductor laser device of claim 1 ,
wherein the first first-conductivity type cladding layer, the first second-conductivity type cladding layer, the second first-conductivity type cladding layer and the second second-conductivity type cladding layer include AlGaInP.
4. The self oscillation type semiconductor laser device of claim 3 ,
wherein assuming that the impurity concentration in the first second-conductivity type cladding layer is Cp1 and that the impurity concentration in the second second-conductivity type cladding layer is Cp2, there is a relationship of Cp1<Cp2.
5. The self oscillation type semiconductor laser device of claim 1 .
wherein assuming that the impurity concentration in the first second-conductivity type cladding layer is Cp1, there is a relationship of Cp1<7×10 17 cm −3 .
6. The self oscillation type semiconductor laser device of claim 1 ,
wherein assuming that the impurity concentration in the second second-conductivity type cladding layer is Cp2, there is a relationship of 1×10 17 cm −3 <Cp2<8×10 17 cm −3 .
7. The self oscillation type semiconductor laser device of claim 3 ,
wherein assuming that the impurity concentration in the first second-conductivity type cladding layer is Cp1 and that the impurity concentration in the second second-conductivity type cladding layer is Cp2, there is a relationship of 1×10 17 cm −3 <Cp1<Cp2<7×10 17 cm −3 .
8. The self oscillation type semiconductor laser device of claim 1 ,
wherein a first ridge is formed in the first second-conductivity type cladding layer, and
a second ridge is formed in the second second-conductivity type cladding layer.
9. The self oscillation type semiconductor laser device of claim 8 ,
wherein a current confining layer is formed on each of sidewalls of the first ridge and the second ridge.
10. The self oscillation type semiconductor laser device of claim 9 ,
wherein the current confining layer is made of GaAs.