Electric element, memory device, and semiconductor integrated circuit formed using a state-variable material whose resistance value varies according to an applied pulse voltage

1. An electric element, comprising:

a first electrode;

a second electrode; and

a layer connected between the first electrode and the second electrode and having a diode characteristic and a variable resistance characteristic,

wherein the layer conducts a substantial electric current in a forward direction extending from one of the first electrode and the second electrode to the other electrode as compared to a reverse direction opposite of the forward direction, and

the resistance value of the layer for the forward direction increases or decreases according to a predetermined pulse voltage applied between the first electrode and the second electrode.

2. The electric element of claim 1 , wherein the work function of the first electrode is different from that of the second electrode.

3. The electric element of claim 2 , wherein:

the work function of the first electrode is smaller than that of the second electrode; and

the layer exhibits a diode characteristic such that the forward direction is the direction extending from the first electrode to the second electrode.

4. The electric element of claim 2 , wherein:

the work function of the first electrode is greater than that of the second electrode; and

the layer exhibits a diode characteristic such that the forward direction is the direction extending from the second electrode to the first electrode.

5. The electric element of claim 3 , wherein:

when a pulse voltage is applied between the first electrode and the second electrode such that the first electrode becomes positive with respect to the second electrode, the resistance value of the layer for the forward direction decreases; and

when a pulse voltage is applied between the first electrode and the second electrode such that the first electrode becomes negative with respect to the second electrode, the resistance value of the layer for the forward direction increases.

6. The electric element of claim 4 , wherein:

when a pulse voltage is applied between the first electrode and the second electrode such that the first electrode becomes positive with respect to the second electrode, the resistance value of the layer for the forward direction decreases; and

when a pulse voltage is applied between the first electrode and the second electrode such that the first electrode becomes negative with respect to the second electrode, the resistance value of the layer for the forward direction increases.

7. The electric element of claim 3 , wherein:

when a pulse voltage is applied between the first electrode and the second electrode such that the first electrode becomes positive with respect to the second electrode, the resistance value of the layer for the forward direction increases; and

when a pulse voltage is applied between the first electrode and the second electrode such that the first electrode becomes negative with respect to the second electrode, the resistance value of the layer for the forward direction decreases.

8. The electric element of claim 4 , wherein:

when a pulse voltage is applied between the first electrode and the second electrode such that the first electrode becomes positive with respect to the second electrode, the resistance value of the layer for the forward direction increases; and

when a pulse voltage is applied between the first electrode and the second electrode such that the first electrode becomes negative with respect to the second electrode, the resistance value of the layer for the forward direction decreases.

9. The electric element of claim 1 , wherein the crystallinity of the layer is nonuniform.

10. The electric element of claim 9 , wherein:

the crystallinity uniformity decreases in the reverse direction; and

the forward direction extends from the first electrode to the second electrode.

11. The electric element of claim 10 , wherein:

a positive initialization voltage is applied from the first electrode to the second electrode;

when a pulse voltage is applied between the first electrode and the second electrode such that the first electrode becomes positive with respect to the second electrode, the resistance value of the layer for the forward direction decreases; and

when a pulse voltage is applied between the first electrode and the second electrode such that the first electrode becomes negative with respect to the second electrode, the resistance value of the layer for the forward direction increases.

12. The electric element of claim 10 , wherein:

a negative initialization voltage is applied from the first electrode to the second electrode;

when a pulse voltage is applied between the first electrode and the second electrode such that the first electrode becomes positive with respect to the second electrode, the resistance value of the layer for the forward direction increases; and

when a pulse voltage is applied between the first electrode and the second electrode such that the first electrode becomes negative with respect to the second electrode, the resistance value of the layer for the forward direction decreases.

13. The electric element of claim 1 , wherein the electric element stores 1-bit or multi-bit information by applying a predetermined pulse voltage between the first electrode and the second electrode such that the resistance value for the forward direction is changed.

14. The electric element of claim 1 , wherein 1-bit or multi-bit information is read from the electric element by applying a predetermined pulse voltage between the first electrode and the second electrode such that an electric current flows in the forward direction according to the resistance value of the layer.

15. A memory device, comprising:

a plurality of electric elements of claim 1 formed in a matrix;

a plurality of word lines;

a word line driver for applying a predetermined voltage to the plurality word lines;

a plurality of bit lines; and

a bit line driver for applying a predetermined voltage to the plurality bit lines,

wherein in each of the plurality of electric elements, the first electrode is connected to any one of the plurality of word lines, and the second electrode is connected to any one of the plurality of bit lines.

16. The memory device of claim 15 , wherein in order to store information in any one of the plurality electric elements,

the word line driver applies a first pulse voltage to one of the plurality of word lines which is connected to an electric element in which the information is to be stored, and

the bit line driver applies a second pulse voltage to one of the plurality of bit lines which is connected to the electric element in which the information is to be stored.

17. The memory device of claim 15 , wherein in order to reproduce information stored in any one of the plurality of electric elements,

the word line driver applies a reproduction voltage to one of the plurality of word lines which is connected to an electric element from which the information is to be read, and

the bit line driver applies the reproduction voltage to the plurality of bit lines except for the one that is connected to the electric element from which the information is to be read.

18. A semiconductor integrated circuit, comprising:

the memory device of claim 15 ; and

a logic circuit for performing a predetermined operation,

wherein the logic circuit has a memorization mode and a reproduction mode,

in the memorization mode, the logic circuit stores bit data in the memory device, and

in the reproduction mode, the logic circuit reads bit data stored in the memory device.

19. A semiconductor integrated circuit, comprising:

the memory device of claim 15 ; and

a processor which has a program execution mode and a program rewrite mode,

wherein in the program execution mode, the processor operates according to a program stored in the memory device, and

in the program rewrite mode, the processor rewrites a program stored in the memory device to another new program received from outside.

20. The electric element of claim 1 , wherein the layer comprises a metal oxide having a spinel structure.

21. The electric element of claim 1 , wherein the layer comprises a ferroelectric oxide containing a metal added thereto.

22. The electric element of claim 21 , wherein the ferroelectric oxide has an ilmenite structure.

23. The electric element of claim 1 , wherein the layer comprises a metal oxide having a perovskite structure.

24. The electric element of claim 23 , wherein the metal oxide has at least one of a CMR characteristic and high-temperature superconductivity.

25. The electric element of claim 1 , wherein the layer does not contain an alkali metal or alkaline-earth metal.

26. The electric element of claim 1 , comprising:

a lower electrode corresponding to the second electrode and formed on a substrate, wherein the layer is formed on the lower electrode; and

an upper electrode corresponding to the first electrode and formed on the layer,

wherein the layer includes a region between the upper electrode and the lower electrode and having a diode characteristic and a variable resistance characteristic.

27. The electric element of claim 26 , wherein:

the work function of the upper electrode is smaller than that of the lower electrode;

the region exhibits the diode characteristic such that the forward direction extends from the upper electrode to the lower electrode;

when a pulse voltage is applied between the upper electrode and the lower electrode such that the upper electrode becomes positive with respect to the lower electrode, the resistance value of the region for the forward direction decreases; and

when a pulse voltage is applied between the upper electrode and the lower electrode such that the upper electrode becomes negative with respect to the lower electrode, the resistance value of the region for the forward direction increases.

28. The electric element of claim 26 , wherein:

the work function of the upper electrode is greater than that of the lower electrode;

the region exhibits a diode characteristic such that the forward direction extends from the lower electrode to the upper electrode;

when a pulse voltage is applied between the upper electrode and the lower electrode such that the upper electrode becomes positive with respect to the lower electrode, the resistance value of the region for the forward direction decreases; and

when a pulse voltage is applied between the upper electrode and the lower electrode such that the upper electrode becomes negative with respect to the lower electrode, the resistance value of the region for the forward direction increases.

29. The electric element of claim 26 , wherein:

the work function of the upper electrode is smaller than that of the lower electrode;

the region exhibits a diode characteristic such that the forward direction extends from the upper electrode to the lower electrode;

when a pulse voltage is applied between the upper electrode and the lower electrode such that the upper electrode becomes positive with respect to the lower electrode, the resistance value of the region for the forward direction increases; and

when a pulse voltage is applied between the upper electrode and the lower electrode such that the upper electrode becomes negative with respect to the lower electrode, the resistance value of the region for the forward direction decreases.

30. The electric element of claim 26 , wherein:

the work function of the upper electrode is greater than that of the lower electrode;

the region exhibits a diode characteristic such that the forward direction extends from the lower electrode to the upper electrode;

when a pulse voltage is applied between the upper electrode and the lower electrode such that the upper electrode becomes positive with respect to the lower electrode, the resistance value of the region for the forward direction increases; and

when a pulse voltage is applied between the upper electrode and the lower electrode such that the upper electrode becomes negative with respect to the lower electrode, the resistance value of the region for the forward direction decreases.

31. The electric element of claim 26 , wherein:

crystallinity uniformity of the layer decreases in one of the forward direction and the reverse direction;

the region exhibits a diode characteristic such that the forward direction extends from the upper electrode to the lower electrode;

when a pulse voltage is applied between the upper electrode and the lower electrode such that the upper electrode becomes positive with respect to the lower electrode, the resistance value of the region for the forward direction decreases; and

when a pulse voltage is applied between the upper electrode and the lower electrode such that the upper electrode becomes negative with respect to the lower electrode, the resistance value of the region for the forward direction increases.

32. The electric element of claim 26 , wherein:

crystallinity uniformity of the layer decreases in one of the forward direction and the reverse direction;

the region exhibits a diode characteristic such that the forward direction extends from the upper electrode to the lower electrode;

when a pulse voltage is applied between the upper electrode and the lower electrode such that the upper electrode becomes positive with respect to the lower electrode, the resistance value of the region for the forward direction increases; and

when a pulse voltage is applied between the upper electrode and the lower electrode such that the upper electrode becomes negative with respect to the lower electrode, the resistance value of the region for the forward direction decreases.

33. The electric element of claim 26 , wherein the upper electrode corresponds to a first upper electrode and the region corresponds to a first region further comprising a second upper electrode formed on the layer,

wherein the layer includes a second region between the second upper electrode and the lower electrode,

the second region conducts a substantial electric current in a forward direction extending from one of the second upper electrode and the lower electrode to the other electrode as compared to a reverse direction opposite of forward direction, and

the resistance value of the second region for the forward direction increases or decreases according to a predetermined pulse voltage applied between the second upper electrode and the lower electrode.

34. The electric element of claim 5 , further comprising a voltage driver,

the voltage driver applying the pulse voltage between the first electrode and the second electrode such that the first electrode becomes negative with respect to the second electrode to increase the resistance value of the layer for the forward direction; and

the voltage driver applying the pulse voltage between the first electrode and the second electrode such that the first electrode becomes positive with respect to the second electrode to decrease the resistance value of the layer for the forward direction.

35. The electric element of claim 6 , further comprising a voltage driver,

the voltage driver applying the pulse voltage between the first electrode and the second electrode such that the first electrode becomes negative with respect to the second electrode to increase the resistance value of the layer for the forward direction; and

the voltage driver applying the pulse voltage between the first electrode and the second electrode such that the first electrode becomes positive with respect to the second electrode to decrease the resistance value of the layer for the forward direction.

36. The electric element of claim 11 , further comprising a voltage driver,

the voltage driver applying the pulse voltage between the first electrode and the second electrode such that the first electrode becomes negative with respect to the second electrode to increase the resistance value of the layer for the forward direction; and

the voltage driver applying the pulse voltage between the first electrode and the second electrode such that the first electrode becomes positive with respect to the second electrode to decrease the resistance value of the layer for the forward direction.

37. The electric element of claim 7 , further comprising a voltage driver,

the voltage driver applying the pulse voltage between the first electrode and the second electrode such that the first electrode becomes positive with respect to the second electrode to increase the resistance value of the layer for the forward direction; and

the voltage driver applying the pulse voltage between the first electrode and the second electrode such that the first electrode becomes negative with respect to the second electrode to decrease the resistance value of the layer for the forward direction.

38. The electric element of claim 8 , further comprising a voltage driver,

the voltage driver applying the pulse voltage between the first electrode and the second electrode such that the first electrode becomes positive with respect to the second electrode to increase the resistance value of the layer for the forward direction; and

the voltage driver applying the pulse voltage between the first electrode and the second electrode such that the first electrode becomes negative with respect to the second electrode to decrease the resistance value of the layer for the forward direction.

39. The electric element of claim 12 , further comprising a voltage driver,

the voltage driver applying the pulse voltage between the first electrode and the second electrode such that the first electrode becomes positive with respect to the second electrode to increase the resistance value of the layer for the forward direction; and

the voltage driver applying the pulse voltage between the first electrode and the second electrode such that the first electrode becomes negative with respect to the second electrode to decrease the resistance value of the layer for the forward direction.

40. The electric element of claim 5 , further comprising a voltage driver for applying a measurement voltage between the first electrode and the second electrode such that the first electrode becomes positive with respect to the second electrode in order to measure a resistance value of the layer for the forward direction.

41. The electric element of claim 7 , further comprising a voltage driver for applying a measurement voltage between the first electrode and the second electrode such that the first electrode becomes positive with respect to the second electrode in order to measure a resistance value of the layer for the forward direction.

42. The electric element of claim 11 , further comprising a voltage driver for applying a measurement voltage between the first electrode and the second electrode such that the first electrode becomes positive with respect to the second electrode in order to measure a resistance value of the layer for the forward direction.

43. The electric element of claim 12 , further comprising a voltage driver for applying a measurement voltage between the first electrode and the second electrode such that the first electrode becomes positive with respect to the second electrode in order to measure a resistance value of the layer for the forward direction.

44. The electric element of claim 6 , further comprising a voltage driver for applying a measurement voltage between the first electrode and the second electrode such that the first electrode becomes negative with respect to the second electrode in order to measure a resistance value of the layer for the forward direction.

45. The electric element of claim 8 , further comprising a voltage driver for applying a measurement voltage between the first electrode and the second electrode such that the first electrode becomes negative with respect to the second electrode in order to measure a resistance value of the layer for the forward direction.

46. The memory device of claim 15 , wherein each of the plurality of memory elements is configured to emulate a diode.