IP Library Granted Patent US 8,706,949
Granted Patent B2
US 8,706,949 · App. 11/923,678 · Granted Apr 22, 2014

Monolithic read-while-write flash memory device

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Quick Facts
Patent No.
US 8,706,949
App. No.
11/923,678
Granted
Apr 22, 2014
Kind
B2
Abstract

A memory device includes an executable flash memory partition and a non-executable partition, both partitions being fabricated on a common die. Preferably, both partitions are fabricated using the same flash memory technology. Most preferably, the flash cells of both partitions have insulating floating gates.

Claims (32)

1. A memory device comprising:

an executable flash memory partition;

a non-executable flash memory partition;

circuitry configured to perform at least one of a write operation and an erase operation in the non-executable flash memory partition concurrently with a processor executing code in the executable flash memory partition; and

wherein the executable flash memory partition, the non-executable flash memory partition, and the circuitry are fabricated on a common die.

2. The memory device of claim 1 , wherein the non-executable flash memory partition is a serial-access flash memory partition.

3. The memory device of claim 1 , wherein the non-executable flash memory partition is fabricated as including serial-access flash cells, and the executable flash memory partition is fabricated as including random-access flash cells.

4. The memory device of claim 1 , wherein the circuitry comprises first circuitry for managing the executable flash memory partition and second circuitry for managing the non-executable flash memory partition.

5. The memory device of claim 4 , wherein the second circuitry occupies a smaller area per cell on the common die than the first circuitry occupies per cell on the common die.

6. The memory device of claim 1 , wherein both of the flash memory partitions are fabricated using a common flash memory technology.

7. The memory device of claim 1 , wherein each flash memory cell of the executable flash memory partition has a first memory structure, and wherein each flash memory cell of the non-executable flash memory partition has a second memory structure that differs from the first memory structure.

8. An electronic device comprising the memory device of claim 1 .

9. The electronic device of claim 8 , wherein the electronic device is one of a cellular telephone or a personal data assistant.

10. A method of operating an electronic device, the method comprising:

in a memory device that includes

an executable flash memory partition,

a non-executable flash memory partition, and circuitry configured to perform at least one of a write operation and an erase operation in the non-executable flash memory partition concurrently with a processor executing code in the executable flash memory partition, wherein the executable flash memory partition, the non-executable flash memory partition, and the circuitry are fabricated on a common die, performing:

storing, in the executable flash memory partition, the executable code for operating the electronic device; and

executing the executable code in-place to operate the electronic device, wherein the executable code that is executed in-place in the memory device to operate the electronic device is stored only in the executable flash memory partition in the memory device.

11. The method of claim 10 , wherein the circuitry comprises first circuitry for managing the executable flash memory partition and second circuitry for managing the non-executable flash memory partition, and wherein the second circuitry occupies a smaller area per cell on the common die than the first circuitry.

12. An electronic device comprising a memory device coupled to a processor, the memory device comprising:

an executable flash memory partition having stored therein code usable for operating the electronic device;

a non-executable flash memory partition; and

circuitry configured to perform at least one of a write operation and an erase operation in the non-executable flash memory partition concurrently with the processor executing the code in the executable flash memory partition, wherein the executable flash memory partition, the non-executable flash memory partition, and the circuitry are fabricated on a common die, and wherein the code being executed is stored only in the executable flash memory partition.

13. The electronic device of claim 12 , wherein the non-executable flash memory partition is a serial-access flash memory partition.

14. The electronic device of claim 12 , wherein the non-executable flash memory partition is fabricated as including serial-access flash cells, and wherein the executable flash memory partition is fabricated as including random-access flash cells.

15. The electronic device of claim 12 , wherein the circuitry comprises first circuitry for managing the executable flash memory partition and second circuitry for managing the non-executable flash memory partition.

16. The electronic device of claim 15 , wherein the second circuitry occupies a smaller area per cell on the common die than the first circuitry.

17. The electronic device of claim 12 , wherein the executable flash memory partition and the non-executable flash memory partition are fabricated using a common flash memory technology.

18. The electronic device of claim 12 , wherein each flash memory cell of the executable flash memory partition has a first memory structure, and wherein each flash memory cell of the non-executable flash memory partition has a second memory structure that differs from the first memory structure.

19. The electronic device of claim 18 , wherein the executable flash memory partition includes a NOR flash memory structure, and wherein the non-executable flash memory partition includes a NAND flash memory structure.

20. The electronic device of claim 19 , wherein the electronic device is one of a cellular telephone and a personal data assistant.

Assignments (4)
CHANGE OF NAME Recorded Jun 10, 2025
From: WESTERN DIGITAL ISRAEL LTD.
To: SANDISK ISRAEL LTD.
Reel/Frame 071587/0836 →
CHANGE OF NAME Recorded Aug 21, 2020
From: SANDISK IL LTD
To: WESTERN DIGITAL ISRAEL LTD
Reel/Frame 053574/0513 →
CHANGE OF NAME Recorded Nov 18, 2008
From: MSYSTEMS LTD
To: SANDISK IL LTD.
Reel/Frame 021857/0587 →
CHANGE OF NAME Recorded Nov 6, 2008
From: M-SYSTEMS FLASH DISK PIONEERS LTD.
To: MSYSTEMS LTD
Reel/Frame 021795/0850 →