Display device with rapidly crystallizing light blocking layer and method of manuacturing the same
View Patent ↗A display device that requires less manufacturing time is presented. The display device includes a light blocking member formed on a substrate, a semiconductor layer formed on the light blocking member, and a gate insulating layer formed on the semiconductor layer. Gate conductors, a first interlayer insulating layer, data conductors, a second interlayer insulating layer, and a pixel electrode are formed. A third interlayer insulating layer is deposited with an opening that extends to the pixel electrode. An organic light emitting member is formed in the opening, and a common electrode is formed. The light blocking member contains nickel and silicon oxide. The presence of nickel-and-silicon-oxide light blocking member below the semiconductor improves the crystallizing speed for the semiconductor layer, reducing the overall manufacturing time. Further, the light blocking member is disposed under the pixel electrodes to prevent light leakage, improving the contrast ratio and image quality.
1. A display device comprising:
a substrate;
a light blocking member disposed on the substrate, wherein the light blocking member contains nickel and silicon oxide;
a semiconductor layer disposed on the light blocking member and comprising a channel region;
a gate insulating layer disposed on the semiconductor layer;
gate conductors disposed on the gate insulating layer;
a first interlayer insulating layer disposed on the gate insulating layer and the gate conductors;
data conductors disposed on the first interlayer insulating layer;
a second interlayer insulating layer disposed on the data conductors and the first interlayer insulating layer;
a pixel electrode disposed on the second interlayer insulating layer;
a third interlayer insulating layer having an opening extending to the pixel electrode;
an organic light emitting member formed inside the opening; and
a common electrode disposed on the organic light emitting member and the third interlayer insulating layer;
wherein the channel region of the semiconductor layer overlaps with the light blocking member.
2. The display device of claim 1 , wherein proportions of nickel and silicon oxide vary with distance from the substrate.
3. The display device of claim 1 , wherein the nickel concentration in the light blocking member increases closer to the substrate.
4. The display device of claim 1 , wherein the silicon oxide concentration in the light blocking member decreases closer to the substrate.
5. The display device of claim 1 , wherein the light blocking member includes a transmissive portion that is covered by the pixel electrode.
6. The display device of claim 1 , wherein the semiconductor layer is a polysilicon.
7. A method of manufacturing a display device, the method comprising:
forming a light blocking member on a substrate by co-sputtering nickel and silicon oxide;
forming a semiconductor layer on the light blocking member and comprising a channel region;
forming a gate insulating layer on the semiconductor layer and the light blocking member;
forming gate conductors on the gate insulating layer;
forming a first insulating layer on the gate conductors and the gate insulating layer;
forming data conductors on the first insulating layer;
forming a second insulating layer on the data conductors and the first insulating layer;
forming a pixel electrode on the second insulating layer;
forming a third insulating layer having an opening that extends to the pixel electrode;
forming an organic light emitting member in the opening; and
forming the organic light emitting member and the third insulating layer,
wherein the channel region of the semiconductor layer overlaps with the light blocking member.
8. The method of claim 7 , wherein forming the light blocking member comprises forming a transmissive portion that is covered by the pixel electrode.
9. The method of claim 7 , wherein the semiconductor layer comprises polysilicon.
10. A display device comprising:
a substrate;
a light blocking member disposed on the substrate, the light blocking member containing nickel and silicon oxide;
a semiconductor layer disposed on the light blocking member and comprising a channel region;
a gate insulating layer disposed on the semiconductor layer;
control electrodes disposed on the gate insulating layer;
a first interlayer insulating layer disposed on the control electrodes and the gate insulating layer, and having contact holes;
input electrodes and output electrodes disposed on the first interlayer insulating layer, electrically connected with the semiconductor layer through the contact holes, and separated from each other by the control electrodes;
a second interlayer insulating layer disposed on the input electrodes, the output electrodes, and the first interlayer insulating layer; and
pixel electrodes disposed on the second interlayer insulating layer,
wherein the channel region of the semiconductor layer overlaps with the light blocking member.
11. The display device of claim 10 , wherein proportions of nickel and silicon oxide vary with distance from the substrate.
12. The display device of claim 10 , wherein the nickel concentration increases closer to the substrate.
13. The display device of claim 10 , wherein the silicon oxide concentration in the light blocking member decreases closer to the substrate.
14. The display device of claim 10 , wherein the light blocking member has a transmissive portion that is disposed such that it is covered by the pixel electrode.