IP Library Granted Patent US 8,114,689
Granted Patent B2
US 8,114,689 · App. 11/924,927 · Granted Feb 14, 2012

Method for manufacturing light emitting diode chip and light emitting diode light source module

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Quick Facts
Patent No.
US 8,114,689
App. No.
11/924,927
Granted
Feb 14, 2012
Kind
B2
Abstract

The present invention relates to a method for manufacturing a light emitting diode (LED) chip for a chip on board and a method for manufacturing an LED light source module in a chip on board fashion. The method of the present invention includes forming a plurality of LED chips on a wafer, molding a region of each LED chip, cutting the wafer into each LED chip, and testing each LED chip for operating characteristics.

Claims (34)

1. A method for manufacturing a light emitting diode (LED) chip comprising:

forming a plurality of LED chips on a wafer;

molding a region of each LED chip, wherein molding the region of each LED chip comprises:

bonding the wafer on a release film prior to positioning the plurality of LED chips apart from each other;

cutting the wafer into each LED chip, except for the release film;

after bonding and cutting the wafer, stretching the release film to position the plurality of LED chips apart from each other;

filling a gap between the plurality of LED chips with a resin, wherein filling the gap between the plurality of LED chips with the resin comprises installing a resin guide on the release film only along a circumference of the wafer, and wherein the plurality of LED chips are partially covered with the resin; and

curing the resin, wherein each LED chip includes a p-type electrode and an n-type electrode, a filling height of the resin being under a top surface of each of the p-type and n-type electrodes;

cutting the resin into each LED chip; and

testing each LED chip.

2. The method of claim 1 , wherein filling the gap between the plurality of LED chips with the resin further comprises:

filling a space defined by the resin guide with the resin.

3. The method of claim 1 , wherein each LED chip further includes an n-type semiconductor layer, an active layer, and a p-type semiconductor layer, the p-type electrode being formed on the p-type semiconductor layer, and the n-type electrode being formed on the n-type semiconductor layer.

4. The method of claim 3 , wherein molding the region of each LED chip further comprises molding regions other than at least the p-type and the n-type electrodes of each LED chip.

5. A method for manufacturing an LED light source module, comprising:

forming a plurality of LED chips on a wafer;

primarily molding a region of each LED chip, wherein primarily molding the region of each LED chip comprises:

bonding the wafer on a release film prior to positioning the plurality of LED chips apart from each other;

cutting the wafer into each LED chip, except for the release film;

after bonding and cutting the wafer, stretching the release film to position the plurality of LED chips apart from each other;

filling a gap between the plurality of LED chips with a resin, wherein filling the gap between the plurality of LED chips with the resin comprises installing a resin guide on the release film only along a circumference of the wafer, and wherein the plurality of LED chips are partially covered with the resin; and

curing the resin, wherein each LED chip includes a p-type electrode and an n-type electrode, a filling height of the resin being under a top surface of each of the p-type and n-type electrodes;

cutting the resin into each LED chip;

testing each LED chip;

mounting at least one of the tested LED chips on a printed circuit board formed with a circuit pattern; and

secondarily molding the LED chip.

6. The method of claim 5 , wherein filling the gap between the LED chips with the resin comprises:

filling a space defined by the resin guide with the resin.

7. The method of claim 5 , wherein each LED chip further includes an n-type semiconductor layer, an active layer, and a p-type semiconductor layer, the p-type electrode being formed on the p-type semiconductor layer, and the n-type electrode being formed on the n-type semiconductor layer.

8. The method of claim 7 , wherein primary molding the region of each LED chip further comprises primarily molding regions other than at least the p-type and the n-type electrodes of each LED chip.

9. The method of claim 5 , wherein mounting at least one of the tested LED chips on a printed circuit board formed with a circuit pattern comprises:

bonding the LED chip on the printed circuit board; and

wire bonding the LED chip to the circuit pattern.

10. The method of claim 5 , wherein secondary molding the LED chip comprises molding the LED chip using a resin mixed with fluorescent substances.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 17, 2012
From: SAMSUNG ELECTRONICS CO., LTD.
To: SAMSUNG DISPLAY CO., LTD.
Reel/Frame 029045/0860 →