High resistivity silicon carbide
View Patent ↗A recrystallized silicon carbide body is provided that has a resistivity of not less than about 1 E 5 Ω cm and a nitrogen content comprising nitrogen atoms bonded within the body, wherein the nitrogen content is not greater than about 200 ppm.
1. A recrystallized silicon carbide body comprising:
a resistivity of not less than about 1 E 5 Ω cm; and
a nitrogen content of nitrogen atoms bonded within the body, wherein the nitrogen content is not greater than about 200 ppm.
2. The recrystallized silicon carbide body of claim 1 , wherein the resistivity is not less than about 1 E 6 Ω cm.
3. The recrystallized silicon carbide body of claim 1 , wherein the body is polycrystalline comprising grains having an average grain size of not less than about 0.5 microns.
4. The recrystallized silicon carbide body of claim 1 , wherein the body comprises a porosity of not less than about 5 vol %.
5. The recrystallized silicon carbide body of claim 1 , wherein the nitrogen content is not greater than about 150 ppm.
6. The recrystallized silicon carbide body of claim 1 , wherein the body comprises a density of not greater than about 2.9 g/cc.
7. The recrystallized silicon carbide body of claim 1 , further comprising a surface portion overlying at least a portion of the body.
8. The recrystallized silicon carbide body of claim 7 , wherein the surface portion comprises silicon carbide.